Concept

Aluminium gallium arsenide

Related publications (70)

Effect of intercarrier scattering on intersubband transitions in GaAs/AlGaAs quantum well systems

In the present work, we theoretically investigate the intersubband relaxation of electrons in quantum well systems during photoexcitation using an ensemble Monte Carlo approach. In particular, we compare with recent experimental results by Hartig et al. (P ...

1999

Optical properties of ultrathin GaAs layers embedded in AlxGa1-xAs

We present a comparison between the predictions of two theoretical models and experimental results on ultrathin GaAs layers with a thickness in the range from 1 to 8 ML embedded in bulk (AlxGa1-x)As, 0.30 less than or equal to x less than or equal to 0.34. ...

1998

InAsP/InGaAsP Periodic Gain Structure for 1.5µm Vertical Cavity Surface Emitting Laser Applications

Elyahou Kapon, Jean-François Carlin, Alok Rudra, Alexei Sirbu

We have studied the capabilities of chemical beam epitaxy (CBE) to produce high-gain media for long-wavelength (1.5 mu m) vertical cavity surface emitting lasers (VCSELs). Using a parameter pair of low growth temperature and small V/III ratio the integrati ...

1998

Luminescence and reflectivity of GaN/sapphire grown by MOVPE, GSMBE and HVPE

Nicolas Grandjean

This work presents an optical characterization by luminescence and reflectivity of GaN layers grown on sapphire using MOVPE, HVPE and GSMBE. Well resolved optical spectra are obtained for each growth technique. The luminescence of Mg doped MOVPE grown GaN ...

1996

Monolithically integrated optical displacement sensor in GaAs/AlGaAs

René Dändliker

A monolithically integrated displacement sensor has been fabricated in the GaAs/AlGaAs material system. The device is configured as a Michelson interferometer and consists of a DBR laser, a directional coupler, transparent waveguides and a photodetector. I ...

1995

Current Rectification through a Single-Barrier Resonant-Tunneling Quantum Structure

Giorgio Margaritondo, Gergely Papp

We propose a simple quantum structure which exhibits resonant tunneling under one bias and simple tunneling under the opposite one, thus acting as a rectifier. The diode consists of a single laterally-indented barrier. Due to its particular conduction-band ...

1995

Low-Frequency Noise Measurements of Alxga1-Xas/Inyga1-Y as/Gaas High-Electron-Mobility Transistors

Benoît Marie Joseph Deveaud, Marc Ilegems

Low-frequency noise measurements have been performed in the linear range of the I-V characteristics of pseudomorphic Al0.3Ga0.7As/In0.25Ga0.75As/GaAs high electron mobility transistors (HEMTs) grown by molecular beam epitaxy with different channel thicknes ...

1995

Photoluminescence from the 2D electron-gas and many-body effects as a probe of the crystalline quality of pseudomorphic GaAs/InGaAs/AlGaAs and GaAs/n(GaAs)10(n+1)(InAs)m/AlGaAs MODFETs

Marcel Py

We have performed low temperature (5K) photoluminescence (PL) measurements in order to study the crystalline quality of pseudomorphic modulation-doped field effect transistors (MODFET's) grown by MBE. MODFET's based on GaAs/AlGaAs with either an InGaAs or ...

Materials Research Society1994

Comparison of the Lateral Carrier Transport between a Gaas Single-Quantum-Well and the Algaas Barrier During Cathodoluminescence Excitation

Franz-Karl Reinhart, Jean-Daniel Ganière

In a recent paper we measured the lateral hole diffusion in a GaAs/AlGaAs single quantum well (SQW) by a novel method. At helium temperature, we estimate a lateral hole diffusion length in the QW of 1.5 mum. However, the assumption that diffusion takes pla ...

1994

Self-Interstitial Mechanism for Zn Diffusion-Induced Disordering of Gaas/Alxga1-Xas (X=0.1-1) Multiple-Quantum-Well Structures

Franz-Karl Reinhart, Jean-Daniel Ganière

GaAs/AlxGa1-xAs multiple-quantum-well (MQW) structures with identical well thicknesses but with different Al contents x in the barrier (x almost-equal-to 0.1, 0.2, 0.45, and 1) were grown by molecular-beam epitaxy to study the impurity-induced disordering ...

1993

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