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In the past decades, III-nitride semiconductor compounds have attracted an increasing amount of interest due to their applications to blue-violet laser diodes and white light emitting diodes, or for their use as ultraviolet emitting devices for biomedical ...
UV detection is interesting for combustion optimization, air contamination control, fire and solar blind rocket launching detection. Most of these applications require that UV detectors have a huge dynamic response between UV and the visible, and a very lo ...
We demonstrate edge-emitting lasers based on self-assembled InAs quantum dots (QDs) on GaAs substrates. The InAs QDs are embedded in an InGaAs quantum well (QW) to red-shift the lasing transition. The lasers emit at lambda=1.2 mum with threshold current de ...
The scribe and break technique (or dicing) is a widely employed method in the industry of semiconductors to separate infrared laser diodes made from gallium arsenide (GaAs). The scribing step allows to create a precursor crack which is then propagated duri ...
The reduction of the tensile stress contained in GaN layers grown oil sapphire by metalorganic vapor phase epitaxy (MOVPE) is achieved using a low density of initial GaN crystallites. The template layers exhibit a significant reduction in dislocation densi ...
The growth by hydride vapor phase epitaxy (HVPE) of high quality thin GaN layers (d=8 mu m) on c-plane sapphire substrates with dislocation densities lower than 2x10(8) cm(-2) is demonstrated using a two-step process similar to that of metal organic vapor ...
Gallium Nitride (GaN) and its ternary alloys with aluminium and indium have met a growing interest in the last decade. These semiconductors have a large direct bandgap and can be doped with either silicon (Si) for n-type and magnesium (Mg) for p-type layer ...
This thesis presents the first experimental results of a scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) investigation of rubrene at the supramolecular, molecular and submolecular level. Based on its semiconducting and fluores ...
A transmission electron microscopy study of a wide range of p-type GaN samples reveals that high Mg doping has a strong influence on the polarity of GaN. The main characteristic of Mg-doped metal organic vapour phase epitaxy (MOVPE) and bulk GaN is the pre ...
Photonic crystals are periodic dielectric structures, where the periodicity varies on the wavelength scale. Analogous to electrons in semiconductors, the photon propagation can be described using a band structure in which transmission bands are separated b ...