Publications related to Insulated-gate bipolar transistor

Energy-Efficient Frequency Selection Method for Bio-Signal Acquisition in AI/ML Wearables

David Atienza Alonso, Miguel Peon Quiros, José Angel Miranda Calero, Hossein Taji

In wearable sensors, energy efficiency is crucial, particularly during phases where devices are not processing, but rather acquiring biosignals for subsequent analysis. This study focuses on improving the power consumption of wearables during these acquisi ...

2024

Light-Intensity Switching of Graphene/WSe2 Synaptic Devices

Giulia Tagliabue, Tarique Anwar, Hongyu Tang

2D van der Waals heterojunctions (vdWH) have emerged as an attractive platform for the realization of optoelectronic synaptic devices, which are critical for energy-efficient computing systems. Photogating induced by charge traps at the interfaces indeed r ...

Wiley2024

Extended-gate field-effect transistor with aptamer functionalisation layer for measuring hormone concentration in biofluids and corresponding fabrication method

Mihai Adrian Ionescu, Shokoofeh Sheibani

The present invention concerns a biosensor (1) for sensing stress hormone cortisol concentration in a biofluid (27). The biosensor (1) comprises: an electrical transistor transducer (3) comprising a transistor gate electrode (17); a sensing electrode eleme ...

2022

Highly Sensitive Detection of the Antidepressant Fluoxetine With an Extended Gate Field Effect Transistor

Mihai Adrian Ionescu, Shokoofeh Sheibani

Fluoxetine (FL) is one of the selective serotonin reuptake inhibitors, which is used as an anti-depressant, as well as anti-panic drug. In this work, a sensor for label-free recognition of trace amounts of FL is introduced, which is based on an extended ga ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

A perspective on multi-channel technology for the next-generation of GaN power devices

Elison de Nazareth Matioli, Luca Nela

The outstanding properties of Gallium Nitride (GaN) have enabled considerable improvements in the performance of power devices compared to traditional silicon technology, resulting in more efficient and highly compact power converters. GaN power technology ...

AIP Publishing2022

Increased Device Variability Induced by Total Ionizing Dose in 16-nm Bulk nFinFETs

Christian Enz

This article investigates the device variability induced by the total ionizing dose (TID) effects in a commercial 16-nm bulk nFinFETs, using specially designed test structures and measurement procedures aimed at maximizing the matching between devices. DC ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Performance of GaN Power Devices for Cryogenic Applications Down to 4.2 K

Elison de Nazareth Matioli, Luca Nela, Palliyage Srilak Nirmana Perera, Catherine Erine

Gallium nitride (GaN) power devices are employed in an increasing number of applications thanks to their excellent performance. Nevertheless, their potential for cryogenic applications, such as space, aviation, and superconducting systems, has not yet been ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2021

Active-Device Losses in Resonant Power Converters: A Case Study with Class-E Inverters

Elison de Nazareth Matioli, Remco Franciscus Peter van Erp, Armin Jafari, Palliyage Srilak Nirmana Perera, Jessy Anthony Ançay

Recent research has reported an undesirable OFF-state loss in high-frequency soft-switching power converters, such as resonant converters. This loss is attributed to a hysteresis loss related to the charging-discharging process of the output capacitance of ...

IEEE2021

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Insulated-gate bipolar transistor

Energy-Efficient Frequency Selection Method for Bio-Signal Acquisition in AI/ML Wearables

Light-Intensity Switching of Graphene/WSe2 Synaptic Devices

Time-resolved multi-gate ion sensitive field effect transducer and system and method of operating the same

LiNiO Junction Gate for High-performance Enhancement-mode GaN Power Transistor

Extended-gate field-effect transistor with aptamer functionalisation layer for measuring hormone concentration in biofluids and corresponding fabrication method

Highly Sensitive Detection of the Antidepressant Fluoxetine With an Extended Gate Field Effect Transistor

A perspective on multi-channel technology for the next-generation of GaN power devices

Increased Device Variability Induced by Total Ionizing Dose in 16-nm Bulk nFinFETs

Performance of GaN Power Devices for Cryogenic Applications Down to 4.2 K

Active-Device Losses in Resonant Power Converters: A Case Study with Class-E Inverters

Graph Chatbot

Chat with Graph Search

Energy-Efficient Frequency Selection Method for Bio-Signal Acquisition in AI/ML Wearables

Highly Sensitive Detection of the Antidepressant Fluoxetine With an Extended Gate Field Effect Transistor

A perspective on multi-channel technology for the next-generation of GaN power devices

Light-Intensity Switching of Graphene/WSe2 Synaptic Devices

Increased Device Variability Induced by Total Ionizing Dose in 16-nm Bulk nFinFETs

Extended-gate field-effect transistor with aptamer functionalisation layer for measuring hormone concentration in biofluids and corresponding fabrication method

Performance of GaN Power Devices for Cryogenic Applications Down to 4.2 K

Active-Device Losses in Resonant Power Converters: A Case Study with Class-E Inverters

Time-resolved multi-gate ion sensitive field effect transducer and system and method of operating the same

LiNiO Junction Gate for High-performance Enhancement-mode GaN Power Transistor