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We report on the growth and optical properties of dense arrays of single GaAs/AlGaAs quantum dot (QD) heterostructures with pitches as small as 300 nm. The samples were grown by organometallic chemical vapor deposition in dense inverted pyramids on {1 1 1} ...
The continuous downscaling of microelectronic circuits combined with increasing interest in ferroelectric thin films for non-volatile random access memories (FeRAM) is drawing great attention to small ferroelectric thin film structures. There are various c ...
We present a new scheme that mimics pattern formation in biological systems to create transmission patterns in multi-hop ad hoc networks. Our scheme is decentralized and relies exclusively on local interactions between the network nodes to create global tr ...
Sub-micron lithography processes are continuously optimized for semiconductor products where the enormous market potential justifies investment in advanced methods and extremely sophisticated equipment. Due to the extreme process costs and due to the limit ...
Electron capture dissocn. (ECD) of polypeptide cations was obtained with pencil and hollow electron beams for both sidekick and gas-assisted dynamic ion trapping (GADT) using Fourier transform ion cyclotron resonance mass spectrometry (FTICR-MS) with an el ...
The use of electron energy loss spectroscopy (EELS) in determining the electronic properties of Si and thickness dependent loss function of Si with 0.14 eV energy resolution were investigated. The dielectric response function was used to describe the inter ...
A new tool of surface patterning technique for general purpose lithography was developed based on shadow mask method. This paper describes the fabrication of a new type of miniaturized shadow mask. The shadow mask is fabricated by photolithography and etch ...
Electron energy-loss near-edge structure data for the N K and the Cr L 2,3 edges of CrN and Cr2N have been acquired in order to distinguish between these chromium nitride modifications. The N K edge spectra of these compounds have been modelled using both ...
The endeavour to develop nanodevices demands for patterning methods in the nanometer scale. The continuous improvement in lithography methods based on deep UV (DUV), X-ray, or electron beam exposure allow for further progress in integrated circuit hardware ...
Triangular (111) and square-shaped (100) Pb(Zr,Ti)O-3 single crystallites with lateral dimensions down to 50 nm and thickness of 20 nm have been grown using lithography-modulated self-assembly in an in situ sputter process. Epitaxial (111)-oriented Pt on a ...
