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In this letter, we demonstrate a general model to reduce the reverse leakage current (I-R) in high-voltage AlGaN/GaN Schottky diodes (SBDs) by engineering the pinchoff voltage (V-p) of their field plates (FPs). The maximum voltage drop at the Schottky junc ...
Institute of Electrical and Electronics Engineers2017
Ferroelectric oxides, such as lead zirconate titanate, have proved invaluable due to their excellent dielectric and piezoelectric properties. These classes of materials possess a large electric polarization below the Curie temperature. Regions of the cryst ...
Using ferromagnetic resonance spectroscopy at 34 GHz we explored the magnetic anisotropy of single-crystalline GaV4S8 in the field-polarized magnetic state. We describe the data in terms of an easy-axis type uniaxial anisotropy with an anisotropy constant ...
In this work, using zero kelvin ab initio calculations, we revisit the structure and ferroelectric phase transition in antiphase domain boundaries (APBs) in SrTiO3 (STO), which has been previously addressed in terms of a phenomenological approach. We confi ...
Oxygen octahedra tilting is a common structural phenomenon in perovskites and has been subject of intensive studies, particularly in rhombohedral Pb(Zr,Ti)O3 (PZT). Early reports suggest that the tilted octahedra may strongly affect the domain switching be ...
The motion of ferroelectric domain walls greatly contributes to the macroscopic dielectric and piezoelectric response of ferroelectric materials. The domain-wall motion through the ferroelectric material is, however, hindered by pinning on crystal defects, ...
All chemical vapor deposition (CVD) processes rely on the adsorption and decomposition of precursors on a substrate to deposit the desired material. The growth rate of the film is determined by the surface kinetics of the utilized precursor molecules and g ...
The high Curie temperature (T-C similar to 825 degrees C) of BiFeO3 has made this material potentially attractive for the development of high-T-C piezoelectric ceramics. Despite significant advances in the search of new BiFeO3-based compositions, the piezo ...
In this work, we propose and investigate the high performance and low power design space of non-hysteretic negative capacitance MOSFETs for the 14nm node based on the calibrated simulations using an experimental gate stack with PZT ferroelectric to obtain ...
The velocity of individual 1800 domain walls in thin ferroelectric films of PbZr0.1Ti0.9O3 is strongly dependent on the thickness of the top Pt electrode made by electron-beam induced deposition (EBID). We show that when the thickness is varied in the rang ...