Concept

Nitride

Related publications (170)

Bi-stability of contact angle and its role in tuning the morphology of self-assisted GaAs nanowires

Anna Fontcuberta i Morral, Lucas Güniat, Gözde Tütüncüoglu, Martin George Friedl, Heidi Andrea Potts, Jean-Baptiste Leran, Wonjong Kim, Luca Francaviglia, Vladimir Dubrovskii, Jelena Vukajlovic Plestina

We demonstrate the existence of two stable contact angles for the gallium droplet on top of self-assisted GaAs nanowires grown by MBE on patterned silicon substrates. Contact angle around 130 degrees fosters a continuous increase in the nanowire radius, wh ...

IEEE2018

Enhanced piezoelectric properties of c-axis textured aluminium scandium nitride thin films with high scandium content: influence of intrinsic stress and sputtering parameters

Paul Muralt, Gabriel Christmann, Silviu Cosmin Sandu, Stefan Mertin, Clemens Benedict Nyffeler, Mohammad Fazel Parsapour Kolour, Vladimir Pashchenko

Aluminium scandium nitride (ASN) exhibits a largely enhanced piezoelectric response as compared to aluminium nitride (AlN), which makes it an upcoming piezoelectric material for use in next generation RF filters, sensors, actuators and energy harvesting de ...

Ieee2017

Nitrogen reduction and functionalization by a multimetallic uranium nitride complex

Rosario Scopelliti, Marinella Mazzanti, Ivica Zivkovic, Lucile Sylvie Danielle Chatelain, Marta Falcone

Molecular nitrogen (N-2) is cheap and widely available, but its unreactive nature is a challenge when attempting to functionalize it under mild conditions with other widely available substrates (such as carbon monoxide, CO) to produce value-added compounds ...

2017

Thin-Wall GaN/InAlN Multiple Quantum Well Tubes

Nicolas Grandjean, Jean-François Carlin, Raphaël Butté

Thin-wall tubes composed of nitride semiconductors (III-N compounds) based on GaN/InAlN multiple quantum wells (MQWs) are fabricated by metalorganic vapor-phase epitaxy in a simple and full III-N approach. The synthesis of such MQW-tubes is based on the gr ...

Amer Chemical Soc2017

Heterogeneous integration of lithium niobate and silicon nitride waveguides for wafer-scale photonic integrated circuits on silicon

Tobias Kippenberg, Michail Zervas, Nicolas Volet, Martin Hubert Peter Pfeiffer

An ideal photonic integrated circuit for nonlinear photonic applications requires high optical nonlinearities and low loss. This work demonstrates a heterogeneous platform by bonding lithium niobate (LN) thin films onto a silicon nitride (Si3N4) waveguide ...

Optical Society of America2017

Quantification of scattering loss of III-nitride photonic crystal cavities in the blue spectral range

Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Ian Michael Rousseau, Irene Sánchez Arribas, Kanako Shojiki

The mechanisms contributing to experimental quality factors of shortwavelength (lambda = 440-480 nm) III-nitride on silicon one-dimensional photonic crystal cavities were quantified. Fluctuations in fundamental and first-order cavity mode wavelength and qu ...

Amer Physical Soc2017

Critical thickness of GaN on AlN: impact of growth temperature and dislocation density

Nicolas Grandjean, Pirouz Sohi, Denis Martin

Critical thickness and strain relaxation of c-plane GaN layers grown by molecular beam epitaxy on AlN were studied as a function of growth temperature and threading dislocation density (TDD). For this purpose we used AlN/sapphire templates and AlN single c ...

2017

Dark Photocatalysis: Storage of Solar Energy in Carbon Nitride for Time-Delayed Hydrogen Generation

Filip Mateusz Podjaski

While natural photosynthesis serves as the model system for efficient charge separation and decoupling of redox reactions, bio-inspired artificial systems typically lack applicability owing to synthetic challenges and structural complexity. We present here ...

Wiley-Blackwell2017

van der Waals Bonded Co/h-BN Contacts to Ultrathin Black Phosphorus Devices

Ahmet Avsar, Xin Luo

Because of the chemical inertness of two dimensional (2D) hexagonal-boron nitride (h-BN), few atomic-layer hBN is often used to encapsulate air-sensitive 2D crystals such as black phosphorus (BP). However, the effects of h-BN on Schottky barrier height, do ...

Amer Chemical Soc2017

In-Plane-Gate GaN Transistors for High-Power RF Applications

Elison de Nazareth Matioli, Giovanni Santoruvo

In-plane-gatefield-effect transistors (IPGFETs) offer an innovative device architecture in which the channel conductivity is modulated by the electric field from the 2D electron gas in the two adjacent in-plane gates, isolated by etched trenches. The plana ...

2017

Graph Chatbot

Chat with Graph Search

Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.

DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.