Concept
Threshold voltage
Related publications (357)
Light-Intensity Switching of Graphene/WSe2 Synaptic Devices
Giulia Tagliabue, Tarique Anwar, Hongyu Tang
2D van der Waals heterojunctions (vdWH) have emerged as an attractive platform for the realization of optoelectronic synaptic devices, which are critical for energy-efficient computing systems. Photogating induced by charge traps at the interfaces indeed r ...
Wiley2024Doping Engineering for PDP Optimization in SPADs Implemented in 55-nm BCD Process
Edoardo Charbon, Claudio Bruschini, Myung Jae Lee, Feng Liu
We introduce a new family of single-photon avalanche diodes (SPADs) with enhanced depletion regions in a 55-nm Bipolar-CMOS-DMOS (BCD) technology. We demonstrate how to systematically engineer doping profiles in the main junction and in deep p-well layers ...
Piscataway2024A Dual-Channel Gate Driver Design with Active Voltage Balancing Circuit for Series Connection of SiC MOSFETs
Dual-channel gate driver is commonly utilized in the industry for accommodating the widespread use of half-bridge power modules. As wide-bandgap devices become increasingly prevalent due to their superior switching characteristics compared with conventiona ...
2024Active Voltage Balancing with Seamless Integration into Dual Gate Driver for Series Connection of SiC MOSFETs
The versatility of half-bridge configuration of silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) power module contributes to its widespread adoption, highlighting the popularity and significance of its corresponding dual gat ...
2024Font Side Solutions for c-Si Solar Cells with High-Temperature Passivating Contacts
In this work, we studied the potential of using thin films deposited by plasma-enhanced chemical vapor deposition (PECVD) for two main purposes: introducing an n-type passivating contact at the front of a TOPCon solar cell, or simplifying the fabrication o ...
EPFL20243D Printing of Customizable Transient Bioelectronics and Sensors
Danick Briand, Nicolas Francis Fumeaux
Transient electronics have emerged as a new category of devices that can degrade after their functional lifetime, offering tremendous potential as disposable sensors, actuators, wearables, and implants. Additive manufacturing methods represent a promising ...
2024THE PHASE TRANSITION FOR PLANAR GAUSSIAN PERCOLATION MODELS WITHOUT FKG
We develop techniques to study the phase transition for planar Gaussian percolation models that are not (necessarily) positively correlated. These models lack the property of positive associations (also known as the 'FKG inequality'), and hence many classi ...
Cleveland2023Berry curvature dipole generation and helicity-to-spin conversion at symmetry-mismatched heterointerfaces
The Berry curvature dipole (BCD) is a key parameter that describes the geometric nature of energy bands in solids. It defines the dipole-like distribution of Berry curvature in the band structure and plays a key role in emergent nonlinear phenomena. The th ...
NATURE PORTFOLIO2023Phonon Self-Energy Corrections: To Screen, or Not to Screen
First-principles calculations of phonons are often based on the adiabatic approximation and on Brillouinzone samplings that might not always be sufficient to capture the subtleties of Kohn anomalies. These shortcomings can be addressed through corrections ...
College Pk2023Surfactant behavior and limited incorporation of indium during in situ doping of GeSn grown by molecular beam epitaxy
Anna Fontcuberta i Morral, Andrea Giunto, Thomas Hagger, Louise Emma Webb
GeSn is a promising group-IV semiconductor material for on-chip Si photonics devices and high-mobility transistors. These devices require the use of doped GeSn regions, achieved preferably in situ during epitaxy. From the electronic valence point of view, ...
AMER PHYSICAL SOC2023