Concept

Deep-level transient spectroscopy

Related publications (60)

Cryogenic MOS Transistor Model

Christian Enz, Farzan Jazaeri, Arnout Lodewijk M Beckers

This paper presents a physics-based analytical model for the MOS transistor operating continuously from room temperature down to liquid-helium temperature (4.2 K) from depletion to strong inversion and in the linear and saturation regimes. The model is dev ...

2018

SPICE Modeling of Photoelectric Effects in Silicon With Generalized Devices

Jean-Michel Sallese, Camillo Stefanucci, Pietro Buccella, Chiara Rossi

Modeling photoelectric effects in semiconductors with electrical simulators is demonstrated in typical 1-D and 2-D architectures. The concept is based on a coarse meshing of the semiconductor with the so-called generalized lumped devices, where equivalent ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2018

Characterization and Modeling of 28 nm Bulk CMOS Technology down to Cryogenic Temperatures (4.2 K)

Christian Enz, Farzan Jazaeri, Arnout Lodewijk M Beckers

This paper presents an experimental investigation, compact modeling, and low-temperature physics-based modeling of a commercial 28-nm bulk CMOS technology operating at cryogenic temperatures. The physical and technological parameters are extracted at 300, ...

2018

Deep level trapped defect analysis in CH3NH3PbI3 perovskite solar cells by deep level transient spectroscopy

Mohammad Khaja Nazeeruddin, Yonghui Lee

We report the presence of defects in CH3NH3PbI3, which is one of the main factors that deteriorates the performance of perovskite solar cells. Although the efficiency of the perovskite solar cells has been improved by curing defects using various methods, ...

Royal Soc Chemistry2017

Active Guard Ring Characterization for Smart Power ICs

Maher Kayal, Jean-Michel Sallese, Camillo Stefanucci, Pietro Buccella

This paper shows SPICE simulation results of active guard ring structures which are typically employed in Smart Power ICs. Active guard rings act as barriers limiting the flow of minority carriers injected into the substrate toward sensitive circuits. The ...

Ieee2016

Analysis of Substrate Currents Propagation in HVCMOS technology

Maher Kayal, Jean-Michel Sallese, Camillo Stefanucci, Pietro Buccella

This work reports the results of a layout-aware substrate modeling methodology for HVCMOS technologies. The model relies on the extraction of parasitic substrate network to simulate with circuit software parasitic lateral NPN bipolar transistors with multi ...

IEEE2016

Identifying Fundamental Limitations in Halide Perovskite Solar Cells

Michael Graetzel, Shaik Mohammed Zakeeruddin, Chenyi Yi, Nripan Mathews

The temperature dependence of the principal photovoltaic parameters of perovskite photovoltaics is studied. The recombination activation energy is in good agreement with the perovskite's bandgap energy, thereby placing an upper bound on the open-circuit vo ...

Wiley-Blackwell2016

Experimental determination of the bulk Rashba parameters in BiTeBr

Arnaud Magrez, Helmuth Berger, Philippe Bugnon

Shubnikov-de Haas (SdH) oscillations, Hall effect, and optical reflectance (R(omega)) measurements have been performed on single crystals of BiTeBr. Under magnetic fields up to 32 tesla and at temperatures as low as 0.4K, the SdH data shows a single oscill ...

Epl Association, European Physical Society2016

Dopant-Free Donor (D)--D--D Conjugated Hole-Transport Materials for Efficient and Stable Perovskite Solar Cells

Shaik Mohammed Zakeeruddin, Jingshan Luo, Chenyi Yi, Dongqin Bi, Xiong Li, Fei Zhang, Shilong Wang

Three novel hole-transporting materials (HTMs) using the 4-methoxytriphenylamine (MeOTPA) core were designed and synthesized. The energy levels of the HTMs were tuned to match the perovskite energy levels by introducing symmetrical electron-donating groups ...

Wiley-VCH Verlag Berlin2016

Dopant-Free Donor (D)–p–D–p–D Conjugated Hole- Transport Materials for Efficient and Stable Perovskite Solar Cells

Shaik Mohammed Zakeeruddin, Jingshan Luo, Chenyi Yi, Dongqin Bi, Xiong Li, Fei Zhang, Shilong Wang

2016

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