Concept

Non-volatile random-access memory

Related publications (72)

Impact of Interface Traps in Floating-Gate Memory Based on Monolayer MoS2

Two-dimensional materials (2DMs) have found potential applications in many areas of electronics, such as sensing, memory systems, optoelectronics, and power. Despite an intense experimental work, the literature is lacking of accurate modeling of nonvolatil ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Exploring ferroelectricity in HfO2-based thin films by tackling application-relevant challenges

Matteo Cavalieri

Ferroelectric materials offer a broad range of application-relevant properties, including spontaneous polarization switchable by electric field. Archetypical representatives of this class of materials are perovskites, currently used in applications ranging ...

EPFL2021

Memory chip or memory array for wide-voltage range in-memory computing using bitline technology

David Atienza Alonso, Marina Zapater Sancho, Marco Antonio Rios, William Andrew Simon

A random access memory having a memory array having a plurality of local memory groups, each local memory group including a plurality of bitcells arranged in a bitcell column, a pair of local bitlines operatively connected to the plurality of bitcells, a p ...

2021

Write Termination circuits for RRAM : A Holistic Approach From Technology to Application Considerations

David Atienza Alonso, Alexandre Sébastien Julien Levisse, Marco Antonio Rios

While Resistive Random Access Memories (RRAM) are perceived nowadays as a promising solution for the future of computing, these technologies suffer from intrinsic variability regarding programming voltage, switching speed and achieved resistance values. Wr ...

IEEE2020

RRAM-VAC: A Variability-Aware Controller for RRAM-based Memory Architectures

David Atienza Alonso, Alexandre Sébastien Julien Levisse, Marco Antonio Rios, Shikhar Tuli

The growing need for connected, smart and energy efficient devices requires them to provide both ultra-low standby power and relatively high computing capabilities when awoken. In this context, emerging resistive memory technologies (RRAM) appear as a prom ...

2020

Perovskite Flash Memory with a Single-Layer Nanofloating Gate

Mohammad Khaja Nazeeruddin, Peng Gao, Hobeom Kim

Here we use triple-cation metal-organic halide perovskite single crystals for the transistor channel of a flash memory device. Moreover, we design and demonstrate a 10 nm thick single-layer nanofloating gate. It consists of a ternary blend of two organic s ...

2020

Low-Power Design of Digital VLSI Circuits around the Point of First Failure

Andrea Bonetti

As an increase of intelligent and self-powered devices is forecasted for our future everyday life, the implementation of energy-autonomous devices that can wirelessly communicate data from sensors is crucial. Even though techniques such as voltage scaling ...

EPFL2019

Fine-Grain Checkpointing with In-Cache-Line Logging

James Richard Larus, David Teksen Aksun, Nachshon Cohen

Non-Volatile Memory offers the possibility of implementing high-performance, durable data structures. However, achieving performance comparable to well-designed data structures in non-persistent (transient) memory is difficult, primarily because of the cos ...

ACM2019

Material and Electrical study of HfO2-Based Resistive Random Access Memories (ReRAMs)

Behnoush Attarimashalkoubeh

Resistive Random Access Memories (ReRAMs) have been researched intensively in the last past decades as a promising alternatives technology for the next-generation non-volatile memory (NVM) devices. ReRAMâs excellent performance properties such as high sw ...

EPFL2019

Data-Retention-Time Characterization of Gain-Cell eDRAMs across the Design and Variations Space

Andreas Peter Burg, Andrea Bonetti

The rise of data-intensive applications has increased the demand for high-density and low-power embedded memories. Among them, the gain-cell embedded DRAM (GC-eDRAM) is a suitable alternative to the static random access memory (SRAM) due to its high memory ...

IEEE2019

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