Publications related to Non-volatile random-access memory

Software Controlled Cell Bit-Density to Improve NAND Flash Lifetime

Paolo Ienne, David Novo Bruna, Xavier Jimenez

Hybrid flash architectures combine static partitions in Sing le Level Cell (SLC) mode with partitions in Multi Level Cell (MLC) mode. Compared to MLC-only solutions, the former exploits fast and short random writes while the latter brings large capacity. O ...

Ieee2012

Surface potential compact model for embedded flash devices oriented to IC memory design

Alexandre Schmid, Yusuf Leblebici, Davide Garetto

A surface potential-based model for embedded flash memory cells has been developed with the purpose of providing a comprehensive physical understanding of the device operation suitable for performance optimization in memory circuit design. The device equat ...

Pergamon-Elsevier Science Ltd2012

Characterization and physical modeling of endurance in embedded non-volatile memory technology

Alexandre Schmid, Yusuf Leblebici, Davide Garetto

Transient and endurance mechanisms in highperformance embedded non-volatile memory flash devices are investigated in detail. An extraction methodology combining measurements on equivalent transistors and flash cells is proposed to discriminate the effects ...

2011

Ferroelectric polymer gates for non-volatile field effect control of ferromagnetism in (Ga, Mn)As layers

Nava Setter, Igor Stolichnov, Harry Joseph Trodahl, Sebastian Riester, Evgeny Mikheev

(Ga, Mn)As and other diluted magnetic semiconductors (DMS) attract a great deal of attention for potential spintronic applications because of the possibility of controlling the magnetic properties via electrical gating. Integration of a ferroelectric gate ...

2011

The Curie temperature as a key design parameter of ferroelectric Field Effect Transistors

Mihai Adrian Ionescu, Didier Bouvet, Livio Lattanzio, Giovanni Antonio Salvatore

Interest in Ferroelectric FETs originates from their potential as non-volatile memories and, more recently, as abrupt switches. In this work, we focus on the role of the Curie temperature of the gate stack on the performance of Fe-FETs. The proposed study ...

IEEE2010

Ferroelectric Polymer Gate Transistor as a Model System for Exploring the Mechanisms of the Retention Loss

Mihai Adrian Ionescu, Nava Setter, Alexander Tagantsev, Igor Stolichnov, Didier Bouvet, Giovanni Antonio Salvatore, Sebastian Riester, Roman Gysel

An attractive combination of properties of the ferroelectric copolymer of vinylidene fluoride and trifluoroethylene (P(VDF-TrFE)), including a relatively high spontaneous polarization and low dielectric constant as well as low processing temperature makes ...

Taylor & Francis2010

Analytical and compact models of the ONO capacitance in embedded non-volatile flash devices

Alexandre Schmid, Yusuf Leblebici, Davide Garetto

The floating gate (FG) potential VFG in a non–volatile flash memory (NVM) device is the main parameter controlling the behavior of the cell. A common technique to model VFG is based on the calculation of the coupling coefficients between all the terminals ...

2009

Embedded non–volatile memory study with surface potential based model

Alexandre Schmid, Yusuf Leblebici, Davide Garetto

Coupling coefficients calculation is known to be a critical issue in embedded Non-Volatile Memory (eNVM) compact modeling. In this paper we have implemented the charge balance method within the Brew’s Charge Sheet Model equation, determining the floating g ...

2009

1T Memory Cell Based on PVDF-TrFE Field Effect Transistor

Mihai Adrian Ionescu, Nava Setter, Igor Stolichnov, Didier Bouvet, Giovanni Antonio Salvatore, Sebastian Riester, Roman Gysel

Interest in PVDF-TrFE copolymers as ferroelectric material for Memory application is driven by the prospect of having low cost, low operating voltage and fully organic device. Some previous studies reported FET designs using copolymers [refs 1,2] but none ...

2008

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Non-volatile random-access memory

Software Controlled Cell Bit-Density to Improve NAND Flash Lifetime

Surface potential compact model for embedded flash devices oriented to IC memory design

Characterization and physical modeling of endurance in embedded non-volatile memory technology

Ferroelectric Field Effect Transistor for Memory and Switch Applications

Ferroelectric polymer gates for non-volatile field effect control of ferromagnetism in (Ga, Mn)As layers

The Curie temperature as a key design parameter of ferroelectric Field Effect Transistors

Ferroelectric Polymer Gate Transistor as a Model System for Exploring the Mechanisms of the Retention Loss

Analytical and compact models of the ONO capacitance in embedded non-volatile flash devices

Embedded non–volatile memory study with surface potential based model

1T Memory Cell Based on PVDF-TrFE Field Effect Transistor

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Chat with Graph Search

Software Controlled Cell Bit-Density to Improve NAND Flash Lifetime

Characterization and physical modeling of endurance in embedded non-volatile memory technology

Surface potential compact model for embedded flash devices oriented to IC memory design

Ferroelectric Field Effect Transistor for Memory and Switch Applications

Ferroelectric polymer gates for non-volatile field effect control of ferromagnetism in (Ga, Mn)As layers

1T Memory Cell Based on PVDF-TrFE Field Effect Transistor

Analytical and compact models of the ONO capacitance in embedded non-volatile flash devices

The Curie temperature as a key design parameter of ferroelectric Field Effect Transistors

Ferroelectric Polymer Gate Transistor as a Model System for Exploring the Mechanisms of the Retention Loss

Embedded non–volatile memory study with surface potential based model