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We report fast modulation (>30 GHz) in a SOI resonant cavity using integrated Bragg mirrors and a gate-all-around transistor as active element. Modulation depth >90% can be obtained in 12.5 μm long devices. ...
Using the atomic force microscope (AFM), we have fabricated a metal oxide semiconductor field-effect transistor (MOSFET) on silicon with an effective channel length of 0.1 um. The lithography at the gate level was performed with the scanning tip of the AFM ...
Spin-dependent ballistic transport in a mesoscopic two-dimensional electron system with two metallic ferromagnetic electrodes is studied using the Landauer-Büttiker formalism. Our calculations predict a pronounced spin-valve effect in the ballistic regime ...
An experimental demonstration of a set of optical logic gates (OR, XOR, AND) is shown using non-linear mixing in a BBO crystal. Pulses generated by a femtosecond Ti:Sapphire laser at 800 nm (140 fs duration, 2nJ/pulse) are split in 4 beams evenly separated ...
Spie-Int Soc Optical Engineering, Po Box 10, Bellingham, Wa 98227-0010 Usa1999
We have built a model organic field-effect transistor that is basically composed of a single layer of pentacene crystal in interaction with an oxide surface. Drain and source contacts are ohmic so that the pentacene layer can carry a current density as hig ...
Deutsche Physikalische Gesellschaft & IOP Publishing Ltd2005
The low-frequency noise of lattice-matched InAlAs/InGaAs/InP high electron mobility transistors (HEMT's) gate recess etched with a highly selective dry etching process and with conventional wet etching were studied at different gate and drain biases for th ...
Institute of Electrical and Electronics Engineers1998
We fabricated field-effect transistors based on individual single- and multi-wall carbon nanotubes and analyzed their performance. Transport through the nanotubes is dominated by holes and, at room temperature, it appears to be diffusive rather than ballis ...
We present a comparative study, at 300 K and at low longitudinal field, of the DC characteristics and the low-frequency noise in the drain current of GaAs/AlGaAs MODFETs which, ideally, differ only by the doping mode of the AlGaAs layer. The higher 1/f-lik ...
