Publications related to ISFET | EPFL Graph Search

Extended-gate field-effect transistor with aptamer functionalisation layer for measuring hormone concentration in biofluids and corresponding fabrication method

Mihai Adrian Ionescu, Shokoofeh Sheibani

The present invention concerns a biosensor (1) for sensing stress hormone cortisol concentration in a biofluid (27). The biosensor (1) comprises: an electrical transistor transducer (3) comprising a transistor gate electrode (17); a sensing electrode eleme ...

2022

Theoretical Studies of Nanowire Ion-Sensitive Field Effect Transistor

Jean-Michel Sallese, Ashkhen Yesayan

The operation principle of a semiconductor nanowire (NW) ion-sensitive field-effect transistor (ISFET), denoted for pH sensing, is studied within the framework of this work. The physical processes in the system are mathematically modelled and presented in ...

PLEIADES PUBLISHING INC2021

Sensitivity, Noise and Resolution in a B -Modified Foundry-Made ISFET with Miniaturized Reference Electrode for Wearable Point-of-Care Applications

Mihai Adrian Ionescu, Junrui Zhang, Francesco Bellando, Pierpaolo Palestri, Luca Selmi

Ion-sensitive field-effect transistors (ISFETs) form a high sensitivity and scalable class of sensors, compatible with advanced complementary metal-oxide semiconductor (CMOS) processes. Despite many previous demonstrations about their merits as low-power ...

2021

Magnetization-prepared 2 Rapid Gradient-Echo MRI for B-1 Insensitive 3D T1 Mapping of Hip Cartilage: An Experimental and Clinical Validation

Tobias Kober

Background: Often used for T1 mapping of hip cartilage, three-dimensional (3D) dual-flip-angle (DFA) techniques are highly sensitive to flip angle variations related to B-1 inhomogeneities. The authors hypothesized that 3D magnetization-prepared 2 rapid gr ...

RADIOLOGICAL SOC NORTH AMERICA2021

Analytical Modeling of Double-Gate and Nanowire Junctionless ISFETs

Jean-Michel Sallese, Farzan Jazaeri, Ashkhen Yesayan

In this article, we present a theoretical analysis of a junctionless (JL), ion-sensitive, field-effect-transistor (ISFET), self-consistently combining the electrochemical interaction between the semiconductor-insulator interface and the surrounding electro ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2020

Subthermionic negative capacitance ion sensitive field-effect transistor

Mihai Adrian Ionescu, Ali Saeidi, Francesco Bellando, Carlotta Gastaldi

One of the main advantages of Ion-Sensitive Field-Effect Transistor (ISFET) technology is the capability to exploit technological advancements initially developed for conventional FETs for logic applications, such as the employ of high-k dielectrics for th ...

2020

Sweat Biomarker Sensor Incorporating Picowatt, Three-Dimensional Extended Metal Gate Ion Sensitive Field Effect Transistors

Mihai Adrian Ionescu, Fabien Patrick Wildhaber, Junrui Zhang, Erick Antonio Garcia Cordero, Maneesha Rupakula, Hoël Maxime Guérin, Francesco Bellando, Guillaume Charles Henri Herment

Ion sensitive field effect transistors (ISFETs) form a very attractive solution for wearable sensors due to their capacity for ultra-miniaturization, low power operation, and very high sensitivity, supported by complementary metal oxide semiconductor (CMOS ...

2019

Detection of ultra-low protein concentrations with the simplest possible field effect transistor

Mihai Adrian Ionescu, Elizabeth Buitrago Godinez

Silicon nanowire (Si NW) sensors have attracted great attention due to their ability to provide fast, low-cost, label-free, real-time detection of chemical and biological species. Usually configured as field effect transistors (FETs), they have already dem ...

IOP PUBLISHING LTD2019

Charge-Based Modeling of Radiation Damage in Symmetric Double-Gate MOSFETs

Christian Enz, Farzan Jazaeri, Chunmin Zhang, Alessandro Pezzotta

In this paper, a comprehensive charge-based predictive model of interface and oxide trapped charges in undoped symmetric long-channel double-gate MOSFETs is developed. The model involves essentially no fitting parameters, but first-principle calculations o ...

2018

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ISFET

Extended-gate field-effect transistor with aptamer functionalisation layer for measuring hormone concentration in biofluids and corresponding fabrication method

Theoretical Studies of Nanowire Ion-Sensitive Field Effect Transistor

Sensitivity, Noise and Resolution in a B -Modified Foundry-Made ISFET with Miniaturized Reference Electrode for Wearable Point-of-Care Applications

Magnetization-prepared 2 Rapid Gradient-Echo MRI for B-1 Insensitive 3D T1 Mapping of Hip Cartilage: An Experimental and Clinical Validation

Analytical Modeling of Double-Gate and Nanowire Junctionless ISFETs

Subthermionic negative capacitance ion sensitive field-effect transistor

Sweat monitoring with CMOS compatible technology: ISFETS and beyond

Sweat Biomarker Sensor Incorporating Picowatt, Three-Dimensional Extended Metal Gate Ion Sensitive Field Effect Transistors

Detection of ultra-low protein concentrations with the simplest possible field effect transistor

Charge-Based Modeling of Radiation Damage in Symmetric Double-Gate MOSFETs

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Chat with Graph Search

Magnetization-prepared 2 Rapid Gradient-Echo MRI for B-1 Insensitive 3D T1 Mapping of Hip Cartilage: An Experimental and Clinical Validation

Sweat monitoring with CMOS compatible technology: ISFETS and beyond

Subthermionic negative capacitance ion sensitive field-effect transistor

Analytical Modeling of Double-Gate and Nanowire Junctionless ISFETs

Sweat Biomarker Sensor Incorporating Picowatt, Three-Dimensional Extended Metal Gate Ion Sensitive Field Effect Transistors

Detection of ultra-low protein concentrations with the simplest possible field effect transistor

Charge-Based Modeling of Radiation Damage in Symmetric Double-Gate MOSFETs

Extended-gate field-effect transistor with aptamer functionalisation layer for measuring hormone concentration in biofluids and corresponding fabrication method

Theoretical Studies of Nanowire Ion-Sensitive Field Effect Transistor

Sensitivity, Noise and Resolution in a B -Modified Foundry-Made ISFET with Miniaturized Reference Electrode for Wearable Point-of-Care Applications