Concept

Threshold displacement energy

Related publications (68)

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The radiation hardness of 180 nm complementary metal-oxide-semiconductor (CMOS) and 55 nm bipolar-CMOS-double-diffused MOS single-photon avalanche diodes (SPADs) is studied using 10 MeV and 100 MeV protons up to a displacement damage dose of 1 PeV/g. It is ...

MDPI2022

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Most metallurgical properties, e.g., dislocation propagation, precipitate formation, can only be fully understood atomistically but most phenomena and quantities of interest cannot be measured experimentally. Accurate simulation methods are essential but f ...

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We consider a Gross-Pitaevskii equation which appears as a model in the description of dipolar Bose-Einstein condensates, without a confining external trapping potential. We describe the asymptotic dynamics of solutions to the corresponding Cauchy problem ...

2020

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Convergence Analysis and Criterion for Data Assimilation with Sensitivities from Monte Carlo Neutron Transport Codes

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Sensitivity coefficients calculated with Monte Carlo neutron transport codes are subject to statistical fluctuations. The fluctuations affect parameters that are calculated with the sensitivity coefficients. The convergence study presented here describes t ...

ANS2018

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