Concept

Indium gallium arsenide

Related publications (382)

Growth of Gainas(P) and Gainasp/Gainas Mqw Structures by Cbe

Jean-François Carlin, Alok Rudra, Marc Ilegems

We discuss the growth of lattice matched GaInAs, GaInAsP and GaInAsP/GaInAs multiple quantum well structures for high speed laser applications. Optical cavities, including five 90 angstrom GaInAs quantum wells with GaInAsP barriers and waveguides showed a ...

1992

Electrical characterization of pseudomorphic GaAs/InGaAs/AlGaAs and AlGaAs/InGaAs/AlGaAs modulation doped field effect transistor-type heterostructures grown by molecular-beam epitaxy

Marc Ilegems, Marcel Py

We studied the influence of the indium composition y, growth temperature T(s) and InGaAs quantum-well channel thickness d(ch) on the 300 and 77 K Hall electrical properties of pseudomorphic modulation doped field effect transistor (MODFET)-type heterostruc ...

1992

Influence of Al Content in the Barrier on the Optical-Properties of Gaas/Alxga1-Xas(X=0.1-1) Multiple-Quantum-Well Structures

Franz-Karl Reinhart, Jean-Daniel Ganière, Denis Martin

GaAs/AlxGa1-xAs multiple-quantum-well structures with identical well thicknesses (almost-equal-to 119 angstrom) but with different Al contents x in the barrier (x almost-equal-to 0. 1, 0.2, 0.45, and 1) were grown by molecular-beam epitaxy. We report the c ...

1992

Indirect-Energy-Gap Dependence on Al Concentration in Alxga1-Xas Alloys

The energy of the indirect X exciton in AlxGa1-xAs epitaxial layers (with 0.38 < x < 0.81) has been determined by photoluminescence measurements at a sample temperature of 12 K; from these data, the dependence on the Al concentration x of the energy of the ...

1992

Raman study of a single InP/InAs/InP strained quantum well

Romuald Houdré, Jean-François Carlin, Alok Rudra

We report on the first observation of both confined optical phonons and interface phonons in a single strained InAs quantum well grown on InP. Quasi resonant Raman measurements allow for the observation of interface modes. Informations about the mismatch i ...

1992

RAMAN-STUDY OF A SINGLE INP/INAS/INP STRAINED QUANTUM-WELL

Romuald Houdré, Jean-François Carlin, Alok Rudra

1992

Hole subbands in quantum wells: Comparison between theory and hot-electron-acceptor-luminescence experiments

Alfredo Pasquarello

Recently Zachau, Kash, and Masselink [Phys. Rev. B 44, 4048 (1991)] determined hole-subband dispersions in quantum wells experimentally with the use of hot-electron-acceptor luminescence. We present here results of multiple-band calculations, which are in ...

1992

Photoemission by Synchrotron Radiation from Fe/Si, Co/Si and (Fe-Co)/Si Interfaces

Giorgio Margaritondo

In this work the interface between transition metals (Fe, Co) and Si has been investigated by soft X-ray photoemission spectroscopy. Synchrotron radiation has been used as photon source, measuring valence bands, Si2p and metal 3p core levels with high surf ...

1992

Internally Detected Electron Photoexcitation Spectroscopy on Heterostructures

Giorgio Margaritondo

We applied the internal photoemission technique to the direct observation of deep levels together with barrier heights and band discontinuities at different semiconductor heterostructure interfaces. Its performances and capabilities are superior to those o ...

1992

Electron-Hole Plasma Decay Time in Gaas/(Ga, Al)as Quantum-Wells

A steady state photoluminescence experiment is reported investigating the lifetime of an electron-hole plasma confined in a quintum well. The results are compared with theoretical evaluations of the pure radiative decay rate and good agreement is found. Th ...

1992

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