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We tried to apply the mechanism of surface photovoltage (SPV) to a particular class of semiconductor heterojunctions, those having staggered gaps, with the aim of photoinducing charges of opposite sign at the interface notches and of creating a dipole that ...
The molecular-beam epitaxial growth conditions of (N + 1)(InAs)m/N(GaAs)n short period superlattices (SPSs) on GaAs substrates have been optimized. Hall electrical properties measured by the van der Pauw method were compared to low-temperature photolumines ...
In order to delay the occurrence of the 2D-3D growth mode transition in highly strained InxGa1-xAs epitaxial layers grown on GaAs (001) by molecular beam epitaxy, the mass transport at the surface should be reduced. This can be achieved by increasing the g ...
Energy levels of ground and excited shallow acceptor states in the presence of an external magnetic field have been calculated for center-doped GaAs/AlxGa1-xAs quantum wells (QW's). The impurity states are calculated within a four-band effective-mass theor ...
Hall electrical properties measured by the van der Pauw method and low-temperature photoluminescence (77 K PL) spectra of pseudomorphic GaAs/InyGa1-yAs/AlGaAs modulation-doped field-effect transistor-type heterostructures grown by molecular-beam epitaxy we ...
Photoluminescence (PL), reflectivity and thermally-detected optical absorption (TDOA) experiments have been carried out, at liquid helium temperatures, On In0.35Ga0.65As/GaAs quantum wells (QWs) with different thicknesses of 4, 6, 8 and 10 monolayers (MLs) ...
GaAs/AlxGa1-xAs multiple-quantum-well (MQW) structures with identical well thicknesses but with different Al contents x in the barrier (x almost-equal-to 0.1, 0.2, 0.45, and 1) were grown by molecular-beam epitaxy to study the impurity-induced disordering ...
We report the growth behaviour of InP, InGaAs and InGaAsP on non-planar InP substrates where ridges were formed with (111)A, (211)A, (111)B and (551BAR) sidewall planes. All three materials grow uniformly on the whole patterned surface with (111)A and (211 ...
We have studied the indium and gallium incorporation during growth by chemical beam epitaxy of GaInAs, GaInP and GaInAsP alloys. TMIn, TEGa, cracked AsH3 and PH3 sources were used. The indium incorporation ratio remains nearly constant over the range of pa ...
We investigated the interdiffusion of InGaAs/InP quantum wells (QWs) due to rapid thermal annealing (RTA) by photoluminescence (PL) spectroscopy and wedge transmission electron microscopy (WTEM). After RTA at temperatures between 650 and 900 degrees C (ann ...
