Concept

Class-D amplifier

Related publications (52)

Advances in High-Speed, Multiparametric Atomic Force Microscopy

After decades of technological advancements, high-speed atomic force microscopy (HS-AFM) has emerged as a powerful technique for visualizing dynamic processes. At the nanoscale, the AFM provides valuable insights into the sample by sensing minute interacti ...

EPFL2024

Amorphous Silicon Based Microchannel Plates for Time-of-Flight Positron Emission Tomography

Samira Alexandra Frey

Microchannel plates fabricated from hydrogenated amorphous silicon (AMCPs) are a promising alternative to conventional lead glass microchannel plates. Their main advantages lie in their cheaper and more flexible fabrication processes, allowing for adaptabl ...

EPFL2023

Medipix4, a high granularity four sides buttable pixel readout chip for high resolution spectroscopic X-ray imaging at rates compatible with medical CT scans

Viros Sriskaran

Medipix4 is the latest member in the Medipix/Timepix family of pixel detector chips aimed at high rate spectroscopic X-ray imaging using high-Z materials. The chip address the limitations of conventional hybrid pixel detectors for X-ray imaging. Its predec ...

EPFL2022

An All-Digital 1.25 Mbps 5-Subcarrier OFDM Backscatter Uplink with Delta-Sigma Modulation for Improved Spurious-Free Dynamic Range

James Daniel Rosenthal

This paper describes an all-digital backscatter modulation approach leveraging delta-sigma modulation (DSM) to improve the in-channel spectral characteristics of orthogonal frequency division multiplexed (OFDM) backscatter communication. We demonstrate thr ...

IEEE2022

Blumino: The First Fully Integrated Analog SiPM With On-Chip Time Conversion

Edoardo Charbon, Andrei Ardelean, Emanuele Ripiccini, Andrada Alexandra Muntean, Esteban Venialgo Araujo

Blumino is the first analog silicon photomultiplier with integrated amplifier, comparator and time-to-digital converter (TDC). The combination of a photodetector together with on-chip readout circuitry enables system-level advantages, such as internal para ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2021

Performance of chip-scale optical frequency comb generators in coherent WDM communications

Tobias Kippenberg

Optical frequency combs have the potential to become key building blocks of wavelength-division multiplexing (WDM) communication systems. The strictly equidistant narrow-band spectral lines of a frequency comb can serve either as carriers for parallel WDM ...

OPTICAL SOC AMER2020

On the effect of linear feedback and parametric pumping on a resonator's frequency stability

Luis Guillermo Villanueva Torrijo

Resonant sensors based on micro- and nano-electro mechanical systems (M/NEMS) are ubiquitous in many sensing applications due to their outstanding performance capabilities, which are directly proportional to the quality factor (Q) of the devices. We addres ...

2020

Comprehensive Spectral Analysis of PWM Waveforms With Compensated DC link Oscillations

Drazen Dujic, Stefan Milovanovic

In the available literature, including reference books on the topic, the spectral analysis of voltage waveforms obtained through the use of pulse-width modulation relies on the assumption of an ideally flat voltage across the DC link of a considered switch ...

2020

A 10b SAR ADC with Widely Scalable Sampling Rate and AGC Amplifier Front-End

Seyed Armin Tajalli, Yusuf Leblebici, Firat Çelik, Ayça Akkaya

This paper presents a low power successive approximation register (SAR) ADC and its front-end automatic gain control (AGC) amplifier designed in 65nm CMOS technology. Digitally controlled variable gain amplifier (VGA) in AGC loop is used to maximize the dy ...

IEEE2018

A remotely powered fully integrated low power class-E power amplifier for implantable sensor systems

Catherine Dehollain, Enver Gürhan Kilinç, Kerim Türe

This paper presents a fully integrated low power class-E power amplifier and its integration to remotely powered sensor system. The on-chip 1.2 GHz power amplifier is implemented in 0.18 A mu m CMOS process with 0.2 V supply. The implantable system is powe ...

Springer2016

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