Concept
Cascode
Related publications (61)
Negative Resistance in Cascode Transistors
Elison de Nazareth Matioli, Armin Jafari, Palliyage Srilak Nirmana Perera
Cascode topology which includes a high-voltage GaN and a low-voltage Si transistor is an attractive device concept, which uses the low ON-resistance of GaN while still being compatible with Si gate drivers. It demonstrates the highest threshold voltage amo ...
2020Hardware-in-the-Loop Characterization of Source-Affected Output Characteristics of Cascaded H-Bridge Converter
Recent trends in power system design such as an increasing share of renewable energy sources and integration of power electronics equipment for medium voltage applications are creating different subsystem interactions that require proper investigation, und ...
2020Subthermionic negative capacitance ion sensitive field-effect transistor
Mihai Adrian Ionescu, Ali Saeidi, Francesco Bellando, Carlotta Gastaldi
One of the main advantages of Ion-Sensitive Field-Effect Transistor (ISFET) technology is the capability to exploit technological advancements initially developed for conventional FETs for logic applications, such as the employ of high-k dielectrics for th ...
2020Coss Loss Tangent of Field-Effect Transistors: Generalizing High-Frequency Soft-Switching Losses
Elison de Nazareth Matioli, Armin Jafari, Luca Nela, Palliyage Srilak Nirmana Perera
The dissipated energy (Ediss) related to the resonant charging/discharging of a transistor output capacitance, becomes a dominant loss factor for power converters operating in the MHz range. A recent work has introduced a small-signal measurement method to ...
2020Active Phase-Conjugating Rotman Lens With Reflection Amplifiers for Backscattering Enhancement
Active retrodirective antenna arrays find a variety of use in applications involving wireless communication and sensing systems. This article presents a novel active version of the phase-conjugating Rotman lens with negative conductance amplifiers for appl ...
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2020Exposure assessment of body-implanted capsules in the 100-MHz–5-GHz range
Anja Skrivervik, Denys Nikolayev
Body-implanted bioelectronics rely on antennas to interface with external on- or off-body equipment. For a given input power, the antenna type and operating frequency significantly affect the power dissipation in tissues. This study addresses the exposure ...
2019Modeling of Total Ionizing Dose Degradation on 180-nm n-MOSFETs Using BSIM3
Nergiz Sahin Solmaz, Mustafa Berke Yelten, Sadik Ilik
This paper presents a modeling approach to simulate the impact of total ionizing dose (TID) degradation on low-power analog and mixed-signal circuits. The modeling approach has been performed on 180-nm n-type metal-oxide-semiconductor field-effect transist ...
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2019Devices and Circuits Using Novel 2-D Materials: A Perspective for Future VLSI Systems
Giovanni De Micheli, Giovanni Vincenzo Resta, Pierre-Emmanuel Julien Marc Gaillardon
Here, we review the most recent developments in the field of 2-D electronics. We focus first on the synthesis of 2-D materials, discussing the different growth techniques currently available and assessing their strengths and weaknesses. Moreover, we descri ...
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2019Near Hysteresis-Free Negative Capacitance InGaAs Tunnel FETs with Enhanced Digital and Analog Figures of Merit below VDD=400mV
Mihai Adrian Ionescu, Igor Stolichnov, Ali Saeidi, Hiroshi Iwai
We report the universal boosting impact of a true negative capacitance (NC) effect on digital and analog performances of Tunnel FETs (TFETs), mirrored for the first time in near hysteresis-free experiments and exploiting the S-shaped polarization character ...
2019CJM: A Compact Model for Double-Gate Junction FETs
Jean-Michel Sallese, Farzan Jazaeri, Matthias Bucher
The double-gate (DG) junction field-effect transistor (JFET) is a classical electron device, with a simple structure that presents many advantages in terms of device fabrication but also its principle of operation. The device has been largely used in low-n ...
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2019