Publications related to Dopant

Increased Photoconductivity Lifetime in GaAs Nanowires by Controlled n-Type and p-Type Doping

Anna Fontcuberta i Morral, Federico Matteini, Alberto Casadei, Fauzia Jabeen

Controlled doping of GaAs nanowires is crucial for the development of nanowire-based electronic and optoelectronic devices. Here, we present a noncontact method based on time resolved terahertz photoconductivity for assessing n- and p-type doping efficienc ...

American Chemical Society2016

Increased Photoconductivity Lifetimes in GaAs Nanowires via n-Type and p-Type Shell Doping

Anna Fontcuberta i Morral, Federico Matteini, Francesca Amaduzzi

Reliable doping in GaAs nanowires is essential for the development of novel optoelectronic devices. Previously, GaAs nanowires have been shown to exhibit extremely short photoconductivity lifetimes of a few picoseconds due to their high surface recombinati ...

Ieee2016

Monolayer Doping of Silicon through Grafting a Tailored Molecular Phosphorus Precursor onto Oxide-Passivated Silicon Surfaces

David Lyndon Emsley, Aaron James Rossini, Tsung-Han Lin

Monolayer doping (MLD) of silicon substrates at the nanoscale is a powerful method to provide controlled doses of dopants and defect-free materials. However, this approach requires the deposition of a thick SiO2 cap layer to limit dopant evaporation during ...

2016

High-Efficiency Perovskite Solar Cells Employing a S,N-Heteropentacene-based D-A Hole-Transport Material

Michael Graetzel, Mohammad Khaja Nazeeruddin, Shaik Mohammed Zakeeruddin, Ulf Anders Hagfeldt, Peng Gao, Dongqin Bi, Marius Franckevicius, Amaresh Mishra

We developed a new donor--acceptor-type hole-transport material (HTMs) incorporating S,N-heteropentacene as -spacer, triarylamine as donor, and dicyanovinylene as acceptor. In addition to appropriate frontier molecular orbital energies, the new HTM showed ...

Wiley-V C H Verlag Gmbh2016

Surface oxidation effect on the electrical behaviour of Bi2Te2Se nanoplatelets

Klaus Kern, Marko Burghard, Pascal Gehring

Charge transport in topological insulators is notably influenced by moisture and air in the surrounding environment. At present, however, little is known about the detailed composition of the oxidized surface and its impact on the electrical characteristic ...

Iop Publishing Ltd2016

Femtosecond-laser hyperdoping silicon in an SF6 atmosphere: Dopant incorporation mechanism

Tobias Schneider, Silvija Gradecak

In this paper, we examine the fundamental processes that occur during femtosecond-laser hyperdoping of silicon with a gas-phase dopant precursor. We probe the dopant concentration profile as a function of the number of laser pulses and pressure of the dopa ...

Amer Inst Physics2015

Modulation Doping of GaAs/AlGaAs Core-Shell Nanowires With Effective Defect Passivation and High Electron Mobility

Anna Fontcuberta i Morral, Federico Matteini, Alberto Casadei, Sonia Conesa Boj, Francesca Amaduzzi, Fauzia Jabeen

Reliable doping is required to realize many devices based on semiconductor nanowires. Group IIIV nanowires show great promise as elements of high-speed optoelectronic devices, but for such applications it is important that the electron mobility is not comp ...

American Chemical Society2015

Influence of chemically p-type doped active organic semiconductor on the film thickness versus performance trend in cyanine/C-60 bilayer solar cells

Roland Hany, Jakob Heier, Beat Ruhstaller, Adriana Paracchino, Thomas Geiger

Simple bilayer organic solar cells rely on very thin coated films that allow for effective light absorption and charge carrier transport away from the heterojunction at the same time. However, thin films are difficult to coat on rough substrates or over la ...

Iop Publishing Ltd2015

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Dopant

Increased Photoconductivity Lifetime in GaAs Nanowires by Controlled n-Type and p-Type Doping

Increased Photoconductivity Lifetimes in GaAs Nanowires via n-Type and p-Type Shell Doping

Monolayer Doping of Silicon through Grafting a Tailored Molecular Phosphorus Precursor onto Oxide-Passivated Silicon Surfaces

High-Efficiency Perovskite Solar Cells Employing a S,N-Heteropentacene-based D-A Hole-Transport Material

Surface oxidation effect on the electrical behaviour of Bi2Te2Se nanoplatelets

Femtosecond-laser hyperdoping silicon in an SF6 atmosphere: Dopant incorporation mechanism

Composition and temperature dependence of the Yb valence in YbMn6Ge6-xSnx studied by RIXS

Modulation Doping of GaAs/AlGaAs Core-Shell Nanowires With Effective Defect Passivation and High Electron Mobility

Influence of chemically p-type doped active organic semiconductor on the film thickness versus performance trend in cyanine/C-60 bilayer solar cells

Optimization of NH₃-MBE grown p-doped (Al)GaN layers and their implementation in long wavelength laser diodes and tunnel junctions

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Increased Photoconductivity Lifetimes in GaAs Nanowires via n-Type and p-Type Shell Doping

Monolayer Doping of Silicon through Grafting a Tailored Molecular Phosphorus Precursor onto Oxide-Passivated Silicon Surfaces

Increased Photoconductivity Lifetime in GaAs Nanowires by Controlled n-Type and p-Type Doping

Composition and temperature dependence of the Yb valence in YbMn6Ge6-xSnx studied by RIXS

Modulation Doping of GaAs/AlGaAs Core-Shell Nanowires With Effective Defect Passivation and High Electron Mobility

Influence of chemically p-type doped active organic semiconductor on the film thickness versus performance trend in cyanine/C-60 bilayer solar cells

Optimization of NH₃-MBE grown p-doped (Al)GaN layers and their implementation in long wavelength laser diodes and tunnel junctions

High-Efficiency Perovskite Solar Cells Employing a S,N-Heteropentacene-based D-A Hole-Transport Material

Surface oxidation effect on the electrical behaviour of Bi2Te2Se nanoplatelets

Femtosecond-laser hyperdoping silicon in an SF6 atmosphere: Dopant incorporation mechanism