Publications related to Dopant

Surfactant behavior and limited incorporation of indium during in situ doping of GeSn grown by molecular beam epitaxy

Anna Fontcuberta i Morral, Andrea Giunto, Thomas Hagger, Louise Emma Webb

GeSn is a promising group-IV semiconductor material for on-chip Si photonics devices and high-mobility transistors. These devices require the use of doped GeSn regions, achieved preferably in situ during epitaxy. From the electronic valence point of view, ...

AMER PHYSICAL SOC2023

Dynamic Nuclear Polarization of Inorganic Halide Perovskites

David Lyndon Emsley, Michael Allan Hope, Dominik Józef Kubicki, Gabriele Stevanato, Aditya Mishra

The intrinsic low sensitivity of nuclear magnetic resonance (NMR) experiments limits their utility for structure determination of materials. Dynamic nuclear polarization (DNP) under magic angle spinning (MAS) has shown tremendous potential to overcome this ...

2023

A Photonic Integrated Circuit-Based Erbium-doped Waveguide Amplifier

Tobias Kippenberg, Rui Ning Wang, Xinru Ji, Zheru Qiu, Junqiu Liu, Yang Liu, Jijun He

We demonstrate an erbium-doped waveguide amplifier by erbium ion implantation in Si3N4 photonic integrated circuits, achieving 145 mW on-chip output power and more than 30 dB small-signal gain, which is on par with commercial fiber amplifiers and beyond st ...

IEEE2022

Evaluation of secondary electron intensities for dopant profiling in ion implanted semiconductors: a correlative study combining SE, SIMS and ECV methods

Franz-Josef Haug, Aïcha Hessler-Wyser, Quentin Thomas Jeangros, Audrey Marie Isabelle Morisset, Philippe Wyss, Mario Joe Lehmann

This study evaluates the secondary electron (SE) dopant contrast in scanning electron microscopy (SEM) and helium ion microscopy (HIM) on boron implanted silicon sample. Complementary techniques like secondary ion mass spectrometry and electrochemical capa ...

IOP PUBLISHING LTD2021

Influence of the Dopant Gas Precursor in P-Type Nanocrystalline Silicon Layers on the Performance of Front Junction Heterojunction Solar Cells

Christophe Ballif, Quentin Thomas Jeangros, Laurie-Lou Senaud, Mathieu Gérard Boccard, Jan Haschke, Luca Massimiliano Antognini, Jean Cattin, Julie Amandine Dreon, Mario Joe Lehmann, Vincent Philippe Paratte

Silicon heterojunction solar cells can employ p-type hydrogenated nanocrystalline silicon nc-Si:H(p) on their front side, since these can provide better transparency and contact resistance compared to hydrogenated p-type amorphous silicon layers. We invest ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2021

Luminescent lanthanide nanocomposites in thermometry: Chemistry of dopant ions and host matrices

Mohammad Khaja Nazeeruddin

Recently, there has been observed huge progress in the advancement of remote optical nanothermometry, as it plays a vital role in remote, noninvasive, and remote temperature sensing, which is especially important for various bio-applications, e.g., in ther ...

ELSEVIER SCIENCE SA2021

Importance of Long-Range Channel Sr Displacements for the Narrow Emission in Sr[Li2Al2O2N2]:Eu2+ Phosphor

Samuel Poncé

The recently discovered Sr[Li2Al2O2N2]:Eu2+ red phosphor, candidate for the next generation of eco-efficient white light-emitting diodes, exhibits excellent emission spectral position and exceptionally small linewidth. It belongs to the UCr4C4-structure fa ...

WILEY-V C H VERLAG GMBH2021

Elucidating the Doping Mechanism in Fluorene-Dithiophene-Based Hole Selective Layer Employing Ultrahydrophobic Ionic Liquid Dopant

Mohammad Khaja Nazeeruddin, Sanghyun Paek, Laura Calio

Perovskite solar cells have set a new milestone in terms of efficiencies in the thin film photovoltaics category. Long-term stability of perovskite solar cells is of paramount importance but remains a challenging task. The lack of perovskite solar cells st ...

2020

A method for quantitative nanoscale imaging of dopant distributions using secondary ion mass spectrometry: an application example in silicon photovoltaics

Franz-Josef Haug, Aïcha Hessler-Wyser, Quentin Thomas Jeangros, Andrea Ingenito, Gizem Nogay, Mario Joe Lehmann

A method for rapid quantitative imaging of dopant distribution using secondary ion mass spectrometry (SIMS) is described. The method is based on SIMS imaging of the cross-section of a reference sample with a known concentration profile. It is demonstrated ...

CAMBRIDGE UNIV PRESS2019

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Dopant

Surfactant behavior and limited incorporation of indium during in situ doping of GeSn grown by molecular beam epitaxy

Dynamic Nuclear Polarization of Inorganic Halide Perovskites

Time-resolved multi-gate ion sensitive field effect transducer and system and method of operating the same

A Photonic Integrated Circuit-Based Erbium-doped Waveguide Amplifier

Evaluation of secondary electron intensities for dopant profiling in ion implanted semiconductors: a correlative study combining SE, SIMS and ECV methods

Influence of the Dopant Gas Precursor in P-Type Nanocrystalline Silicon Layers on the Performance of Front Junction Heterojunction Solar Cells

Luminescent lanthanide nanocomposites in thermometry: Chemistry of dopant ions and host matrices

Importance of Long-Range Channel Sr Displacements for the Narrow Emission in Sr[Li2Al2O2N2]:Eu2+ Phosphor

Elucidating the Doping Mechanism in Fluorene-Dithiophene-Based Hole Selective Layer Employing Ultrahydrophobic Ionic Liquid Dopant

A method for quantitative nanoscale imaging of dopant distributions using secondary ion mass spectrometry: an application example in silicon photovoltaics

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Chat with Graph Search

Time-resolved multi-gate ion sensitive field effect transducer and system and method of operating the same

Dynamic Nuclear Polarization of Inorganic Halide Perovskites

Importance of Long-Range Channel Sr Displacements for the Narrow Emission in Sr[Li2Al2O2N2]:Eu2+ Phosphor

Luminescent lanthanide nanocomposites in thermometry: Chemistry of dopant ions and host matrices

A Photonic Integrated Circuit-Based Erbium-doped Waveguide Amplifier

Elucidating the Doping Mechanism in Fluorene-Dithiophene-Based Hole Selective Layer Employing Ultrahydrophobic Ionic Liquid Dopant

Influence of the Dopant Gas Precursor in P-Type Nanocrystalline Silicon Layers on the Performance of Front Junction Heterojunction Solar Cells

A method for quantitative nanoscale imaging of dopant distributions using secondary ion mass spectrometry: an application example in silicon photovoltaics

Surfactant behavior and limited incorporation of indium during in situ doping of GeSn grown by molecular beam epitaxy

Evaluation of secondary electron intensities for dopant profiling in ion implanted semiconductors: a correlative study combining SE, SIMS and ECV methods