Concept

Saturation velocity

Related publications (42)

Giant multiphoton absorption for THz resonances in silicon hydrogenic donors

The absorption of multiple photons when there is no resonant intermediate state is a well-known nonlinear process in atomic vapours, dyes and semiconductors. The N-photon absorption (NPA) rate for donors in semiconductors scales proportionally from hydroge ...

NATURE PUBLISHING GROUP2018

A single chip electron spin resonance detector based on a single high electron mobility transistor

Giovanni Boero, Nergiz Sahin Solmaz, Alessandro Valentino Matheoud

Single-chip microwave oscillators are promising devices for inductive electron spin resonance spectroscopy (ESR) experiments on nanoliter and subnanoliter samples. Two major problems of the previously reported designs were the large minimum microwave magne ...

2018

Topological phase transitions driven by strain in monolayer tellurium

Oleg Yazyev, Quansheng Wu, Wei Zhang

Two-dimensional (2D) Xenes of a single type of element can offer fascinating electronic properties, such as massless Dirac fermions for extremely high charge-carrier mobility and topological insulators for dissipationless electron transport. However, the r ...

AMER PHYSICAL SOC2018

Evaluating Charge Carrier Transport and Surface States in CuFeO

Kevin Sivula, Nestor Guijarro Carratala, Florian Le Formal, Xavier Adrian Jeanbourquin, Mathieu Steven Prévot, Wiktor Stefan Bourée

Interest in delafossite (CuFeO2) as a candidate p-type photocathode for photoelectrochemical (PEC) solar fuel production has recently been increasing, mainly due to its excellent stability in aqueous environments and favorable light absorption properties. ...

American Chemical Society2017

Nanoscale MOSFET Modeling for the Design of Low-power Analog and RF Circuits

Christian Enz, Alessandro Pezzotta

This paper presents the simplified charge-based EKV MOSFET model and shows that it can be used for advanced CMOS processes despite its very few parameters. The concept of inversion coefficient is then presented as an essential design parameter that spans t ...

IEEE2016

Flexible 1kV thin-film transistor driving out-of-plane dielectric elastomer actuator

Danick Briand, Herbert Shea, Samuel Rosset, Alexandre Poulin, Alexis Pierre Henri Marette

This work demonstrates dielectric elastomer actuators controlled by the world's first thin-film transistors on flexible substrate operating at 1kV, thereby enabling locally switching high-voltages on DEAs using a low control voltage. The high voltages requ ...

2016

Graphene Field Effect Devices and Circuits

Clemens Benedict Nyffeler

Electronics today permeate our life and existence. It has become nearly impossible to evade any dependence on electronic devices that surround us every day - computers, phones, televisions. But also other objects become increasingly "smart" - watches, cars ...

EPFL2016

Graphene for Nanoelectronic Applications

Pankaj Sharma

During the past decade, graphene --- a monolayer of carbon atoms --- has attracted enormous interest for its use in nanoelectronic device applications. The absence of bandgap, however, has stalled its use both in logic (inability to turn off) and radio fre ...

EPFL2015

Room-Temperature Negative Differential Resistance in Graphene Field Effect Transistors: Experiments and Theory

Mihai Adrian Ionescu, Arnaud Magrez, Antonios Bazigos, Laurent Syavoch Bernard, Pankaj Sharma

In this paper we demonstrate experimentally and discuss the negative differential resistance (NDR) in dual-gated graphene field effect transistors (GFETs) at room temperature for various channel lengths, ranging from 200 nm to 5 mu m. The GFETs were fabric ...

Amer Chemical Soc2015

Modeling nanoscale quasi-ballistic MOS transistors

Anurag Mangla

The scaling of device technologies poses new challenges, not only in circuit design, but also in device modeling, especially because of the short-channel effects and the emergence of novel phenomena like ballistic transport. Nonetheless, it enables the des ...

EPFL2014

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