Quantum well infrared photodetector

A Quantum Well Infrared Photodetector (QWIP) is an infrared photodetector, which uses electronic intersubband transitions in quantum wells to absorb photons. In order to be used for infrared detection, the parameters of the quantum wells in the quantum well infrared photodetector are adjusted so that the energy difference between its first and second quantized states match the incoming infrared photon energy. QWIPs are typically made of gallium arsenide, a material commonly found in smartphones and high-speed communications equipment. Depending on the material and the design of the quantum wells, the energy levels of the QWIP can be tailored to absorb radiation in the infrared region from 3 to 20 µm. QWIPs are one of the simplest quantum mechanical device structures that can detect mid-wavelength and long-wavelength infrared radiation. They are known for their stability, high pixel-to-pixel uniformity, and high-pixel operability. History In 1985, Stephen Eglash and La

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Bloch Surface Waves Using Graphene Layers: An Approach toward In-Plane Photodetectors

Richa Dubey, Hans Peter Herzig, Myun Sik Kim, Babak Vosoughi Lahijani

A dielectric multilayer platform was investigated as a foundation for two-dimensional optics. In this paper, we present, to the best of our knowledge, the first experimental demonstration of absorption of Bloch surface waves in the presence of graphene layers. Graphene is initially grown on a Cu foil via Chemical Vapor Deposition and transferred layer by layer by a wet-transfer method using poly(methyl methacrylate), (PMMA). We exploit total internal reflection configuration and multi-heterodyne scanning near-field optical microscopy as a far-field coupling method and near-field characterization tool, respectively. The absorption is quantified in terms of propagation lengths of Bloch surface waves. A significant drop in the propagation length of the BSWs is observed in the presence of graphene layers. The propagation length of BSWs in bare multilayer is reduced to 17 times shorter in presence of graphene monolayer, and 23 times shorter for graphene bilayer.

2018

Bloch Surface Waves Using Graphene Layers: An Approach toward In-Plane Photodetectors

Richa Dubey, Hans Peter Herzig, Myun Sik Kim, Babak Vosoughi Lahijani

2018

Si-interdiffusion in heavily doped AlN-GaN-based quantum well intersubband photodetectors

Joab Di Francesco, Nicolas Grandjean, Denis Martin

We demonstrate the effect of rapid thermal annealing on heavily Si-doped AlN/GaN quantum wells. After 1000 degrees C annealing during 5, 10, and 20 min, the dominant effect was interdiffusion of Si rather than intermixing between the Al and Ga atoms. Both their original value and the magnitude of the changes after annealing reveal that intersubband absorption and photovoltage are related to two different optical transitions as follows: absorption occurs in the 1 to 2 intersubband transition, whereas photovoltage is due to a subsequent process from the 1 to 2 and the manifold of 2 to higher order transitions. (C) 2011 American Institute of Physics. [doi:10.1063/1.3599846]

2011

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The course's objectivs are: Learning several advenced methods in experimental physics, and critical reading of experimental papers.

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