Publications related to Current–voltage characteristic

Bias stress effect in low-voltage organic thin-film transistors

Klaus Kern, Hagen Klauk, Ralf Thomas Weitz

The bias stress effect in pentacene organic thin-film transistors has been investigated. The transistors utilize a thin gate dielectric based on an organic self-assembled monolayer and thus can be operated at low voltages. The bias stress-induced threshold ...

2009

Temperature mapping of Al0.85In0.15N/AlN/GaN high electron mobility transistors through micro-photoluminescence studies

Nicolas Grandjean, Jean-François Carlin, Eric Feltin, Marcel Py, Marcus Gonschorek, Dobri Simeonov

Crack-free lattice-matched Al0.85In0.15N/GaN heterostructures were grown on sapphire substrates with barrier thicknesses up to 100 nm which exhibit very high polarization-induced electron sheet density (>2.5 x 10(13) cm(-2)) located at the heterointerface. ...

2009

Temperature mapping of Al0.85In0.15/AlN/Gan high electron mobility transistors through micro-photoluminescence studies

Nicolas Grandjean, Jean-François Carlin, Eric Feltin, Marcel Py, Marcus Gonschorek, Dobri Simeonov

EDP Sciences2009

Ultrathin InAlN/AlN Barrier HEMT With High Performance in Normally Off Operation

Nicolas Grandjean, Jean-François Carlin, Marcus Gonschorek

We present GaN-based high electron mobility transistors (HEMTs) with a 2-nm-thin InAlN/AlN barrier capped with highly doped n(++) GaN. Selective etching of the cap layer results in a well-controllable ultrathin barrier enhancement-mode device with a thresh ...

2009

In-Plane Silicon-On-Nothing Nanometer-Scale Resonant Suspended Gate MOSFET for In-IC Integration Perspectives

Mihai Adrian Ionescu, Nicolas Abelé

A 14-MHz in-plane nanoelectromechanical resonator based on a resonant-suspended-gate (RSG) MOSFET principle and integrated in a front-end process is demonstrated. The devices are in-plane flexural vibration mode beams (L = 10 mum, w = 165 nm, and h = 400 n ...

2008

Evaluation of two commercial finite element packages for calculating AC losses in 2-D high temperature superconducting strips

Francesco Grilli, Frédéric Sirois, François Roy, Bertrand Dutoit

This paper compares the speed and accuracy of two commercial packages based on the finite element method (FEM) for calculating the AC losses in high temperature superconductors (HTS). The softwares investigated in this paper were COMSOL Multiphysics and FL ...

2008

Barrier-layer scaling of InAlN/GaN HEMTs

Nicolas Grandjean, Jean-François Carlin, Eric Feltin, Marcel Py, Marcus Gonschorek

We discuss the characteristics of In0.17Al0.83N/GaN high-electron mobility transistors with barrier thicknesses between 33 and 3 nm, which are grown on sapphire substrates by metal-organic chemical vapor deposition. The maximum drain current (at V-G = +2.0 ...

2008

A new definition of threshold voltage in Tunnel FETs

Mihai Adrian Ionescu, Katherine Boucart

This work reports on the physical definition and extraction of threshold voltage in Tunnel FETs (field effect transistors) based on numerical simulation data. It is shown that the Tunnel FET has the outstanding property of having two threshold voltages: on ...

2008

An Electrical Model of the Cell-Electrode Interface for High-density Microelectrode Arrays

Alexandre Schmid, Yusuf Leblebici, Neil Joye

A point-contact model is presented, and an areacontact model has been analytically derived in order to model the electrical characteristic of the cell-electrode interface of high-density neuron cultures. The area-contact model is presented as a model more ...

IEEE2008

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Current–voltage characteristic

Bias stress effect in low-voltage organic thin-film transistors

Temperature mapping of Al0.85In0.15N/AlN/GaN high electron mobility transistors through micro-photoluminescence studies

Temperature mapping of Al0.85In0.15/AlN/Gan high electron mobility transistors through micro-photoluminescence studies

Ultrathin InAlN/AlN Barrier HEMT With High Performance in Normally Off Operation

A comb drive actuated vertically moving micromirror for tunable mid-infrared Resonant Cavity Enhanced Detectors

In-Plane Silicon-On-Nothing Nanometer-Scale Resonant Suspended Gate MOSFET for In-IC Integration Perspectives

Evaluation of two commercial finite element packages for calculating AC losses in 2-D high temperature superconducting strips

Barrier-layer scaling of InAlN/GaN HEMTs

A new definition of threshold voltage in Tunnel FETs

An Electrical Model of the Cell-Electrode Interface for High-density Microelectrode Arrays

Graph Chatbot

Chat with Graph Search

An Electrical Model of the Cell-Electrode Interface for High-density Microelectrode Arrays

Barrier-layer scaling of InAlN/GaN HEMTs

Evaluation of two commercial finite element packages for calculating AC losses in 2-D high temperature superconducting strips

Bias stress effect in low-voltage organic thin-film transistors

Temperature mapping of Al0.85In0.15N/AlN/GaN high electron mobility transistors through micro-photoluminescence studies

A new definition of threshold voltage in Tunnel FETs

Temperature mapping of Al0.85In0.15/AlN/Gan high electron mobility transistors through micro-photoluminescence studies

Ultrathin InAlN/AlN Barrier HEMT With High Performance in Normally Off Operation

A comb drive actuated vertically moving micromirror for tunable mid-infrared Resonant Cavity Enhanced Detectors

In-Plane Silicon-On-Nothing Nanometer-Scale Resonant Suspended Gate MOSFET for In-IC Integration Perspectives