Drude modelThe Drude model of electrical conduction was proposed in 1900 by Paul Drude to explain the transport properties of electrons in materials (especially metals). Basically, Ohm's law was well established and stated that the current J and voltage V driving the current are related to the resistance R of the material. The inverse of the resistance is known as the conductance. When we consider a metal of unit length and unit cross sectional area, the conductance is known as the conductivity, which is the inverse of resistivity.
Band diagramIn solid-state physics of semiconductors, a band diagram is a diagram plotting various key electron energy levels (Fermi level and nearby energy band edges) as a function of some spatial dimension, which is often denoted x. These diagrams help to explain the operation of many kinds of semiconductor devices and to visualize how bands change with position (band bending). The bands may be coloured to distinguish level filling. A band diagram should not be confused with a band structure plot.
Diagonal relationshipIn chemistry a diagonal relationship is said to exist between certain pairs of diagonally adjacent elements in the second and third periods (first 20 elements) of the periodic table. These pairs (lithium (Li) and magnesium (Mg), beryllium (Be) and aluminium (Al), boron (B) and silicon (Si), etc.) exhibit similar properties; for example, boron and silicon are both semiconductors, forming halides that are hydrolysed in water and have acidic oxides.
Photovoltaic effectThe photovoltaic effect is the generation of voltage and electric current in a material upon exposure to light. It is a physical and chemical phenomenon. The photovoltaic effect is closely related to the photoelectric effect. For both phenomena, light is absorbed, causing excitation of an electron or other charge carrier to a higher-energy state. The main distinction is that the term photoelectric effect is now usually used when the electron is ejected out of the material (usually into a vacuum) and photovoltaic effect used when the excited charge carrier is still contained within the material.
IngotAn ingot is a piece of relatively pure material, usually metal, that is cast into a shape suitable for further processing. In steelmaking, it is the first step among semi-finished casting products. Ingots usually require a second procedure of shaping, such as cold/hot working, cutting, or milling to produce a useful final product. Non-metallic and semiconductor materials prepared in bulk form may also be referred to as ingots, particularly when cast by mold based methods.
Plasma etchingPlasma etching is a form of plasma processing used to fabricate integrated circuits. It involves a high-speed stream of glow discharge (plasma) of an appropriate gas mixture being shot (in pulses) at a sample. The plasma source, known as etch species, can be either charged (ions) or neutral (atoms and radicals). During the process, the plasma generates volatile etch products at room temperature from the chemical reactions between the elements of the material etched and the reactive species generated by the plasma.
PhotophoneThe photophone is a telecommunications device that allows transmission of speech on a beam of light. It was invented jointly by Alexander Graham Bell and his assistant Charles Sumner Tainter on February 19, 1880, at Bell's laboratory at 1325 L Street in Washington, D.C. Both were later to become full associates in the Volta Laboratory Association, created and financed by Bell. On June 3, 1880, Bell's assistant transmitted a wireless voice telephone message from the roof of the Franklin School to the window of Bell's laboratory, some 213 meters (about 700 ft.
Thermoelectric generatorA thermoelectric generator (TEG), also called a Seebeck generator, is a solid state device that converts heat flux (temperature differences) directly into electrical energy through a phenomenon called the Seebeck effect (a form of thermoelectric effect). Thermoelectric generators function like heat engines, but are less bulky and have no moving parts. However, TEGs are typically more expensive and less efficient.
Cadmium tellurideCadmium telluride (CdTe) is a stable crystalline compound formed from cadmium and tellurium. It is mainly used as the semiconducting material in cadmium telluride photovoltaics and an infrared optical window. It is usually sandwiched with cadmium sulfide to form a p–n junction solar PV cell. Cadmium telluride photovoltaics CdTe is used to make thin film solar cells, accounting for about 8% of all solar cells installed in 2011.
Indium arsenideIndium arsenide, InAs, or indium monoarsenide, is a narrow-bandgap semiconductor composed of indium and arsenic. It has the appearance of grey cubic crystals with a melting point of 942 °C. Indium arsenide is similar in properties to gallium arsenide and is a direct bandgap material, with a bandgap of 0.35 eV at room temperature. Indium arsenide is used for the construction of infrared detectors, for the wavelength range of 1.0–3.8 μm. The detectors are usually photovoltaic photodiodes.
