Concept

Aluminium arsenide

Related publications (29)

Momentum-Space Imaging of Ultra-Thin Electron Liquids in δ-Doped Silicon

Two-dimensional dopant layers (δ-layers) in semiconductors provide the high-mobility electron liquids (2DELs) needed for nanoscale quantum-electronic devices. Key parameters such as carrier densities, effective masses, and confinement thicknesses for 2DELs ...

WILEY2023

Fighting Health Hazards in Lead Halide Perovskite Optoelectronic Devices with Transparent Phosphate Salts

László Forró, Endre Horvath, Xavier François Mettan, Márton Kollár, Pavao Roko Andricevic

Organic-inorganic lead halide perovskite (CH3NH3PbI3) solar cells have surpassed 25% power conversion efficiency, being ready for industrial-scale production of cheap photovoltaic (PV) panels. In this action, the major hurdle is its lead content, which in ...

AMER CHEMICAL SOC2021

First-principles calculations of charge carrier mobility and conductivity in bulk semiconductors and two-dimensional materials

Samuel Poncé, Feliciano Giustino

One of the fundamental properties of semiconductors is their ability to support highly tunable electric currents in the presence of electric fields or carrier concentration gradients. These properties are described by transport coefficients such as electro ...

IOP PUBLISHING LTD2020

Transcapacitances in EPFL HEMT Model

Jean-Michel Sallese, Farzan Jazaeri

In this article, we present a closed-form solution for transcapacitances in GaN HEMTs derived from a design-oriented charge-based model of the AlGaAs/GaAs- and AlGaN/GaN-based HEMTs that were recently proposed. The analytical expressions are based on the c ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2020

A computational study of the electromechanical response of micro-structure engineered two port surface acoustic wave delay lines on gallium arsenide is presented. The influence on the results of geometrical, material, and mesh parameters is also discussed. ...

2019

Excitation and time resolved spectroscopy of SAW harmonics up to GHz regime in photolithographed GaAs devices

Pasquale Scarlino, Marco Scigliuzzo

In this work, we demonstrate the excitation of surface acoustic waves (SAW) harmonics up to GHz regime in photolitographed devices fabricated on gallium arsenide (GaAs) by acting on the IDT metallization ratio among the finger width and pitch. Specifically ...

2017

Origin of Fermi-level pinning at GaAs/oxide interfaces through the hybrid functional study of defects

Davide Colleoni

Gallium arsenide is currently under scrutiny for replacing silicon in microelectronic devices due to its high carrier mobilities. However, the widespread use of this semiconductor is hampered by the intrinsic difficulty of producing high-quality interfaces ...

EPFL2015

A review of MBE grown 0D, 1D and 2D quantum structures in a nanowire

Anna Fontcuberta i Morral, Xin Zhou, Silvija Gradecak

We review different strategies to achieve a three-dimensional energy bandgap modulation in a nanowire (NW) by the introduction of self-assembled 0D, 1D and 2D quantum structures, quantum dots (QDs), quantum wires (QWRs) and quantum wells (QWs). Starting wi ...

Royal Soc Chemistry2013

Nanoindentation cracking in gallium arsenide: Part II. TEM investigation

Johann Michler, Jacques Giovanola, Jean-Daniel Ganière, Jean-Marc Breguet, Cédric Pouvreau

The nanoindentation fracture behavior of gallium arsenide (GaAs) is examined from two perspectives in two parent papers. In the first paper (part I), we address the morphology of the crack field induced by different types of indenters by means of in situ n ...

Cambridge University Press2013

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The nanoindentation fracture behavior of gallium arsenide (GaAs) is examined from two perspectives in two parent papers. The first paper (part I) focuses on in situ nanoindentation within a scanning electron microscope (SEM) and on fractographic observatio ...

Cambridge University Press2013

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