Concept

Diode modelling

Related publications (42)

Coulomb blockade phenomenon in ultra-thin gold nanowires

Ultra-thin gold nanowires with uniform diameters of 2 nm and lengths of over 100 μm are synthesized via the reduction of gold(III) chloride in an oleylamine matrix. The gold nanowires, dispersed on an oxidized substrate, are top-contacted with metallic ele ...

American Institute of Physics2012

A new single-photon avalanche diode in 90nm standard CMOS technology

Edoardo Charbon, Marek Gersbach, Hyungjune Yoon, Mohammad Azim Karami

We report on the first implementation of a single-photon avalanche diode (SPAD) in 90nm complementary metal oxide semiconductor (CMOS) technology. The detector features an octagonal multiplication region and a guard ring to prevent premature edge breakdown ...

Optical Society of America2010

Thermally induced voltage shift in capacitance-voltage characteristics and its relation to oxide/semiconductor interface states in Ni/Al2O3/InAlN/GaN heterostructures

Nicolas Grandjean, Jean-François Carlin

The Ni/Al2O3/InAlN/AlN/GaN metal-oxide-semiconductor heterostructure (MOS-H) is investigated using capacitance-voltage and capacitance-time characteristics in the temperature range of 25-300 degrees C. An anomalous positive voltage shift of the capacitance ...

2009

Unique carbon-nanotube field-effect transistors with asymmetric source and drain contacts

Nicola Marzari, Ho Ling Li

We have fabricated a type of unique single-walled carbon nanotube field-effect transistor, in which the channel length is only 90 nm and aluminum and gold are used as its drain and source electrodes, respectively. The channel conductance oscillations cause ...

2008

Micro-Electro-Mechanical Metal-Air-Insulator-Semiconductor Diode Switch

Mihai Adrian Ionescu, Didier Bouvet, Dimitrios Tsamados, Donatello Acquaviva

The design, fabrication and characterization of Micro-electro-mechanical metal-air-insulator-semiconductor (MEM-MAIS) diode switch are originally reported. An abrupt switching from off-state to Fowler-Nordheim tunneling current in on-state is induced by th ...

2008

A new single photon avalanche diode in CMOS high-voltage technology

Radivoje Popovic

we report a new single photon avalanche diode (SPAD) implemented in a commercially available high-voltage CMOS technology. The SPAD was designed with relatively low-doped layers to form p-/n- junction, instead of commonly adopted p+/n- or n+/p- structures. ...

Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2007

ASIC for High-Speed-Gating and Free Running Operation of SPADs

Yusuf Leblebici, Alexandre Pauchard, Alexis Rochas, Grégoire Ribordy

Single photon detection at telecom wavelengths is of importance in many industrial applications ranging from quantum cryptography, quantum optics, optical time domain reflectometry, non-invasive testing of VLSI circuits, eye-safe LIDAR to laser ranging. In ...

2007

Electrically detected magnetic resonance of organic and polymeric light emitting diodes

Frank Nüesch, Libero Zuppiroli

We have used electrically detected magnetic resonance (EDMR) to study the spin dependent processes on the operation of diodes based on poly(2-metoxy-5-(2'-etil-hexiloxy)-1,4-phenylene vinylene) (MEH-PPV) and on tris-8-hydroxyquinoline-aluminum (Alq3

Elsevier2004

Experimental S-2DEG-S junction characteristics and a novel interpretation

Jean-François Carlin, Alok Rudra, Marc Ilegems

We present experimental transport characteristics of long and ballistic superconductor - 2-dimensional electron gas - superconductor junctions obtained in a temperature range from 1K down to 10mK. Surprisingly the critical current I-c can be fitted to the ...

1996

Rate equation approach for diode lasers. II. Steady state solutions for compound systems

René Salathé

For pt. I, see ibid., vol.6, 451 (1974). The light output powers of a semiconductor laser diode within an external cavity and of two optical coupled diodes are evaluated as a function of the system parameters (drive currents and coupling coefficient). A po ...

1974

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