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A two-dimensional (2-D) array (4 by 8) of single-photon avalanche diodes integrated in an industrial complementary metal-oxide-semiconductor (CMOS) process is presented. Each pixel combines a photodiode biased above its breakdown voltage in the so-called G ...
We propose an alternative paradigm for processing time-varying visual inputs, in particular for tasks involving temporal and spatial integration, which is inspired by hypotheses about the computational role of cortical microcircuits. Since detailed knowled ...
In this paper, the necessity for a high pressure valve is discussed, and a design for such a valve that has been previously presented is described. This valve can be built using simple fabrication techniques available in microsystem foundries. Its fabricat ...
We report on the fabrication of Ti:sapphire channel waveguides. Such channel waveguides are of interest, e.g., as low-threshold tunable lasers. We investigated several structuring methods including ion beam implantation followed by wet chemical etching str ...
The inexpensive fabrication of high-quality probes for nearfield optical applications is still unsolved although several methods for integrated fabrication have been proposed in the past. A further drawback is the intensity loss of the transmitted light in ...
Scanning capacitance microscopy and electrostatic force microscopy have been used to characterize commercial semiconductor devices at various stages of the fabrication process. These methods, combined with conventional atomic force microscopy, allow to vis ...
With the development of object identification technology object tagging becomes more and more common. In this work we analyze how recycling processes can benefit from deployment of passive RFID tags and discuss how spreading small electronic chips in the e ...
Resonant-cavity InGaN/GaN quantum well light emitting diodes have been fabricated. Nitride layers were grown by molecular beam epitaxy on Si (111). We fabricated the structures using a combination of Si substrate etching, GaN etching and dielectric (Ta2O5/ ...
A substrate with transparent electrodes is formed from a transparent material on which is deposited a film of a transparent conducting material with a thickness e 1and a refractive index n 1. A substrate with transparent electrodes is formed from a transpa ...