Concept

Schottky defect

Related publications (177)

Dynamics of ferroelectric 180 degrees domain walls at engineered pinning centers

The interaction between domain walls and pinning centers in ferroelectrics is of great interest from both fundamental and practical points of view. In this work, we show that, counter to intuition, the apparent velocity of domain walls can increase as the ...

Amer Inst Physics2017

Dynamical Defects in Rotating Magnetic Skyrmion Lattices

Helmuth Berger

The chiral magnet Cu2OSeO3 hosts a Skyrmion lattice that may be equivalently described as a superposition of plane waves or a lattice of particlelike topological objects. A thermal gradient may break up the Skyrmion lattice and induce rotating domains, rai ...

Amer Physical Soc2017

Identification of Semiconductor Defects through Constant-Fermi-Level Ab Initio Molecular Dynamics: Application to GaAs

Alfredo Pasquarello, Assil Bouzid

We show that constant-Fermi-level ab initio molecular dynamics can be used as a computer-based tool to reveal and control relevant defects in semiconductor materials. In this scheme, the Fermi level can be set at any position within the band gap during the ...

Amer Physical Soc2017

The growth and optical properties of III-V nanostructures grown by Molecular Beam Epitaxy

Gözde Tütüncüoglu

This thesis is dedicated to the growth and characterization of the optoelectronic properties of III-V semiconductor nanostructures namely nanowires and nanoscale membranes. III-V semiconductors possess promising intrinsic properties like direct band gap, h ...

EPFL2017

Tuning growth direction of catalyst-free InAs(Sb) nanowires with indium droplets

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Martin George Friedl, Heidi Andrea Potts, Nicholas Paul Morgan

The need for indium droplets to initiate self-catalyzed growth of InAs nanowires has been highly debated in the last few years. Here, we report on the use of indium droplets to tune the growth direction of self-catalyzed InAs nanowires. The indium droplets ...

Institute of Physics2017

Migration of cations induces reversible performance losses over day/night cycling in perovskite solar cells

Mohammad Khaja Nazeeruddin, Wolfgang Richard Tress, Ulf Anders Hagfeldt, Michael Saliba, Filippo de Angelis, Antonio Abate, Juan-Pablo Correa-Baena, Konrad Domanski, Silver Hamill Turren Cruz, Taisuke Matsui

Perovskites have been demonstrated in solar cells with a power conversion efficiency of well above 20%, which makes them one of the strongest contenders for next generation photovoltaics. While there are no concerns about their efficiency, very little is ...

Royal Soc Chemistry2017

Deep level trapped defect analysis in CH3NH3PbI3 perovskite solar cells by deep level transient spectroscopy

Mohammad Khaja Nazeeruddin, Yonghui Lee

We report the presence of defects in CH3NH3PbI3, which is one of the main factors that deteriorates the performance of perovskite solar cells. Although the efficiency of the perovskite solar cells has been improved by curing defects using various methods, ...

Royal Soc Chemistry2017

Symmetry breaking in hexagonal and cubic polymorphs of BaTiO3

Dragan Damjanovic, Alberto Biancoli

BaTiO3 appears in cubic and hexagonal variants, both of which are centrosymmetric. Samples of cubic BaTiO3 are known to exhibit breaking of the centric symmetry locally and globally. It has been proposed that the local symmetry breaking originates in polar ...

American Institute of Physics2016

Oxygen defects in GaAs: A hybrid functional study

Alfredo Pasquarello, Davide Colleoni

Using hybrid density functional calculations, we address the structural properties, formation energies, and charge transition levels of a variety of oxygen defects in GaAs. The set of considered defects comprises the bridging O atom in a As-O-Ga configurat ...

Amer Physical Soc2016

Multiscale diffusion method for simulations of long-time defect evolution with application to dislocation climb

William Curtin, Kristopher Learion Baker

In many problems of interest to materials scientists and engineers, the evolution of crystalline extended defects (dislocations, cracks, grain boundaries, interfaces, voids, precipitates) is controlled by the flow of point defects (interstitial/substitutio ...

Pergamon-Elsevier Science Ltd2016

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