Publications related to Schottky defect

Increasing N content in GaNAsP nanowires suppresses the impact of polytypism on luminescence

Anna Fontcuberta i Morral, Luca Francaviglia

Cathodoluminescence (CL) and micro-photoluminescence spectroscopies are employed to investigate effects of structural defects on carrier recombination in GaNAsP nanowires (NWs) grown by molecular beam epitaxy on Si substrates. In the NWs with a low N conte ...

2019

Hydrogen sieving from intrinsic defects of benzene-derived single-layer graphene

Kumar Varoon Agrawal, Mostapha Dakhchoune, Shiqi Huang, Jing Zhao, Mina Moradi, Majharul Haque Khan

Single-layer graphene films, crystallized by chemical vapor deposition, host a low density of vacancy defects that are attractive for the size-sieving of molecules. The size and the density of such defects are a function of the growth temperature and the c ...

2019

Perovskite Photovoltaics: The Significant Role of Ligands in Film Formation, Passivation, and Stability

Mohammad Khaja Nazeeruddin, Hong Zhang

Due to their outstanding optoelectronic properties, metal halide perovskites have been intensively studied in recent years. The latest certificated efficiency of 23.3% recently achieved in perovskite solar cells (PVSCs) enables them to be used as a very pr ...

2019

GaN Quantum Dots for Room Temperature Excitonic Physics

Sebastian Pascal Tamariz Kaufmann

Quantum dots (QDs) are the result of quantum confinement in the three spatial directions, as such they exhibit remarkable properties, of which the most important is perhaps the absence of a continuum of states. The allowed energetic levels are discrete, si ...

EPFL2019

GaN-on-Si Quasi-Vertical Power MOSFETs

Elison de Nazareth Matioli, Riyaz Mohammed Abdul Khadar, Chao Liu

We demonstrate the first GaN vertical transistor on silicon, based on a 6.7-mu m-thick n-p-n heterostructure grown on 6-inch silicon substrate by metal organic chemical-vapor deposition. The devices consist of trench-gate quasi-vertical metal-oxide-semicon ...

2018

Slow CH3NH3+ Diffusion in CH3NH3PbI3 under Light Measured by Solid-State NMR and Tracer Diffusion

Michael Graetzel, Joachim Maier, Alessandro Senocrate

We investigate methylammonium (MA) transport in MA lead iodide under illumination and show this, as in the dark, to be measurable but negligible when compared with the major carriers. H-1 and C-13 nuclear magnetic resonance (NMR) spectra show constant line ...

AMER CHEMICAL SOC2018

Highly efficient planar perovskite solar cells achieved by simultaneous defect engineering and formation kinetic control

Mohammad Khaja Nazeeruddin, Hong Zhang, Shunlin Zhang

The formation of high quality (good morphology and low defect concentrations) perovskite films is crucial for realizing high-performance perovskite solar cells (PVSCs). Low-temperature processed perovskite films tend to have a high density of defect states ...

ROYAL SOC CHEMISTRY2018

Domain-wall conduction in ferroelectric BiFeO3 controlled by accumulation of charged defects

Dragan Damjanovic

Mobile charged defects, accumulated in the domain-wall region to screen polarization charges, have been proposed as the origin of the electrical conductivity at domain walls in ferroelectric materials. Despite theoretical and experimental efforts, this sce ...

Nature Publishing Group2017

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Schottky defect

Alignment of energy levels in amorphous oxides and at semiconductor-water interfaces

Increasing N content in GaNAsP nanowires suppresses the impact of polytypism on luminescence

Hydrogen sieving from intrinsic defects of benzene-derived single-layer graphene

Perovskite Photovoltaics: The Significant Role of Ligands in Film Formation, Passivation, and Stability

GaN Quantum Dots for Room Temperature Excitonic Physics

GaN-on-Si Quasi-Vertical Power MOSFETs

Slow CH3NH3+ Diffusion in CH3NH3PbI3 under Light Measured by Solid-State NMR and Tracer Diffusion

Highly efficient planar perovskite solar cells achieved by simultaneous defect engineering and formation kinetic control

Domain-wall conduction in ferroelectric BiFeO3 controlled by accumulation of charged defects

Electronic Transport in 2D Materials with Strong Spin-orbit Coupling

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Chat with Graph Search

Highly efficient planar perovskite solar cells achieved by simultaneous defect engineering and formation kinetic control

Slow CH3NH3+ Diffusion in CH3NH3PbI3 under Light Measured by Solid-State NMR and Tracer Diffusion

Increasing N content in GaNAsP nanowires suppresses the impact of polytypism on luminescence

Electronic Transport in 2D Materials with Strong Spin-orbit Coupling

Hydrogen sieving from intrinsic defects of benzene-derived single-layer graphene

GaN Quantum Dots for Room Temperature Excitonic Physics

GaN-on-Si Quasi-Vertical Power MOSFETs

Domain-wall conduction in ferroelectric BiFeO3 controlled by accumulation of charged defects

Alignment of energy levels in amorphous oxides and at semiconductor-water interfaces

Perovskite Photovoltaics: The Significant Role of Ligands in Film Formation, Passivation, and Stability