Silicon nanowire

Silicon nanowires, also referred to as SiNWs, are a type of semiconductor nanowire most often formed from a silicon precursor by etching of a solid or through catalyzed growth from a vapor or liquid phase. Such nanowires have promising applications in lithium ion batteries, thermoelectrics and sensors. Initial synthesis of SiNWs is often accompanied by thermal oxidation steps to yield structures of accurately tailored size and morphology. SiNWs have unique properties that are not seen in bulk (three-dimensional) silicon materials. These properties arise from an unusual quasi one-dimensional electronic structure and are the subject of research across numerous disciplines and applications. The reason that SiNWs are considered one of the most important one-dimensional materials is they could have a function as building blocks for nanoscale electronics assembled without the need for complex and costly fabrication facilities. SiNWs are frequently studied towards applications including phot

About this result

This page is automatically generated and may contain information that is not correct, complete, up-to-date, or relevant to your search query. The same applies to every other page on this website. Please make sure to verify the information with EPFL's official sources.

Related publications

Related people

Related units

Related concepts

Related courses

Related lectures

Summary

Official source

About this result

Related publications (100)

Related publications

Related people (31)

Related people

Related units (16)

Related units

Related concepts (5)

Related concepts

Related courses (3)

Related courses

Related lectures (6)

Related lectures

Nanowire

A nanowire is a nanostructure in the form of a wire with the diameter of the order of a nanometre (10−9 metres). More generally, nanowires can be defined as structures that have a thickness or diam

Silicon

Silicon is a chemical element with the symbol Si and atomic number 14. It is a hard, brittle crystalline solid with a blue-grey metallic luster, and is a tetravalent metalloid and semiconductor. It is

Chemical vapor deposition

Chemical vapor deposition (CVD) is a vacuum deposition method used to produce high-quality, and high-performance, solid materials. The process is often used in the semiconductor industry to produce

MICRO-470: Scaling laws & simulations in micro & nanosystems

This class combines an analytical and finite elements modeling (FEM) simulations approach to scaling laws in MEMS/NEMS. The dominant physical effects and scaling effects when downsizing sensors and actuators in microsystems are discussed, across a broad range of actuation principles.

MSE-484: Properties of semiconductors and related nanostructures

This course explains the origin of optical and electrical properties of semiconductors. The course elaborates how they change when the semiconductors are reduced to sizes of few nanometers. The course provides also the basis to use software to calculate the properties of hetero/nanostructures.

ME-426: Micro/Nanomechanical devices

In this course we will see an overview of the exciting field of Micro and Nanomechanical systems. We will go over the dfferent scaling laws that dominate the critical parameters, how size affects material properties, how these devices are manufactured, designed and later used.

Silicon Nanowire Arrays Coated with Ag and Au Dendrites for Surface-Enhanced Raman Scattering

Siarhei Zavatski

Silicon nanowires (SiNWs) were comprehensively characterized in dependence on conditions of their formation via metal (Ag) -assisted chemical etching (MACE) of monocrystalline Si. The Ag structures remained on/between SiNWs based on both n- and p-Si were found to promote surface enhancement of Raman scattering (SERS) from organic molecules adsorbed on their surface. The Ag structures on/between the SiNWs/p-Si facilitated two times higher SERS-signal from 10(-6) M rhodamine 6G than those in the SiNWs/n-Si. The activity of the SERS-substrates based on p-Si was improved by modification with small Au dendrites, which provided rich family of hot spots and prevented degradation of the SERS-activity observed for pure Ag dendrites due to formation of Ag2S during one week of storage in air. The SERS-substrates based on the Au/Ag dendrites on SiNWs/p-Si allowed to achieve nanomolar detection limit of rhodamine 6G and 5,5'-dithiobis (2-nitrobenzoic acid).

2020

Label-Free C-Reactive Protein Si Nanowire FET Sensor Arrays With Super-Nernstian Back-Gate Operation

Luca Capua, Ron Gill, Aristea Grammoustianou, Mihai Adrian Ionescu, Felix Risch, Yann Christophe Sprunger

We present a CMOS-compatible double gate and label-free C-reactive protein (CRP) sensor, based on silicon on insulator (SOI) silicon nanowires arrays. We exploit a reference subtracted detection method and a super-Nernstian internal amplification given by the double gate structure. We overcome the Debye screening of charged CRP proteins in solutions using antibodies fragments as capturing probes, reducing the overall thickness of the capture layer. We demonstrate the internal amplification through the pH response of the sensor, in static and real-time working modes. While operated in back-gate configuration, the sensor shows excellent stability (

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

A new characterization approach to study the mechanical behavior of silicon nanowires

Yusuf Leblebici, Mohammad Nasr Esfahani, Zuhal Tasdemir, Mustafa Yilmaz

This work proposes a new approach to characterize the mechanical properties of nanowires based on a combination of nanomechanical measurements and models. Silicon nanowires with a critical dimension of 90 nm and a length of 8 mu m obtained through a monolithic process are characterized through in-situ three-point bending tests. A nonlinear nanomechanical model is developed to evaluate the mechanical behavior of nanowires. In this model, the intrinsic stress and surface parameters are examined based on Raman spectroscopy measurements and molecular dynamics simulations, respectively. This work demonstrates a new approach to measure the mechanical properties of Si nanowires by considering the surface effect and intrinsic stresses. The presented technique can be used to address the existing discrepancies between numerical estimations and experimental measurements on the modulus of elasticity of silicon nanowires.

SPRINGER HEIDELBERG2021