Nanowire

Summary

A nanowire is a nanostructure in the form of a wire with the diameter of the order of a nanometre (10−9 metres). More generally, nanowires can be defined as structures that have a thickness or diameter constrained to tens of nanometers or less and an unconstrained length. At these scales, quantum mechanical effects are important—which coined the term "quantum wires". Many different types of nanowires exist, including superconducting (e.g. YBCO), metallic (e.g. Ni, Pt, Au, Ag), semiconducting (e.g. silicon nanowires (SiNWs), InP, GaN) and insulating (e.g. SiO2, TiO2). Molecular nanowires are composed of repeating molecular units either organic (e.g. DNA) or inorganic (e.g. Mo6S9−xIx). Characteristics Typical nanowires exhibit aspect ratios (length-to-width ratio) of 1000 or more. As such they are often referred to as one-dimensional (1-D) materials. Nanowires have many interesting properties that are not seen in bulk or 3-D (three-dimensional) materials. This is becau

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https://en.wikipedia.org/wiki/Nanowire

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Synthesis and characterization of group II-Vi semiconductor nanowires

Holger Jens Böttcher

Semiconductor nanowires are an emerging class of nanostructures that represent attractive building blocks for nanoscale electronic and photonic devices. To the present, nanowires are synthesized on a small scale by experimentally demanding gas phase deposition techniques. This thesis describes a simple and cost-efficient solution-based synthesis towards high-quality nanowires of Group II-VI compound semiconductors. The effects of various reaction parameters and of doping on the wires' structural, electrical and magnetic properties are investigated. The first part of this thesis is dedicated to a novel variant of the solvothermal synthesis of CdS nanowires employing a single-source precursor. The wires are of single-crystalline quality and can be indexed to wurtzite-type bulk CdS with the preferential growth direction along the axis. As-grown nanowires have a smooth surface, are up to 40 µm long and exhibit aspect ratios up to 1000. The wires' aspect ratio can be increased by choosing a low precursor concentration. Time-dependent experiments reveal the wires to axially grow at a rate of ≈1µm/h while lateral growth only occurs during the initial reaction phase. As shown by photoluminescence spectroscopy the surface defect density can be significantly lowered by raising the reaction temperature from 180 to 200 °C. Electrically contacted CdS nanowires are highly resistive in the dark, but become more conductive by 4 orders of magnitude upon illumination above the bandgap energy (λ

EPFL2010

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Understanding the origins of intrinsic stress in Si nanowires (NWs) is crucial for their successful utilization as transducer building blocks in next-generation, miniaturized sensors based on nanoelectromechanical systems (NEMS). With their small size leading to ultrahigh-resonance frequencies and extreme surface-to-volume ratios, silicon NWs raise new opportunities regarding sensitivity, precision, and speed in both physical and biochemical sensing. With silicon optoelectromechanical properties strongly dependent on the level of NW intrinsic stress, various studies have been devoted to the measurement of such stresses generated, for example, as a result of harsh fabrication processes. However, due to enormous NW surface area, even the native oxide that is conventionally considered as a benign surface condition can cause significant stresses. To address this issue, a combination of nanomechanical characterization and atomistic simulation approaches is developed. Relying only on low-temperature processes, the fabrication approach yields monolithic NWs with optimum boundary conditions, where NWs and support architecture are etched within the same silicon crystal. Resulting NWs are characterized by transmission electron microscopy and micro-Raman spectroscopy. The interpretation of results is carried out through molecular dynamics simulations with ReaxFF potential facilitating the incorporation of humidity and temperature, thereby providing a close replica of the actual oxidation environment-in contrast to previous dry oxidation or self-limiting thermal oxidation studies. As a result, consensus on significant intrinsic tensile stresses on the order of 100 MPa to 1 GPa was achieved as a function of NW critical dimension and aspect ratio. The understanding developed herein regarding the role of native oxide played in the generation of NW intrinsic stresses is important for the design and development of silicon-based NEMS.

AMER CHEMICAL SOC2022

Fabrication and Optoelectronic Properties of Graphene Nanoribbons

Eberhard Ulrich Stützel

Graphene, a single layer of carbon atoms, exhibits excellent charge transport properties. However, due to the absence of a band gap in this two-dimensional carbon nanostructure, graphene-based field effect transistors cannot be turned off. One strategy to increase the on/off ratio relies on patterning graphene into narrow stripes, so-called graphene nanoribbons (GNRs). The present thesis aimed at developing novel fabrication and chemical functionalization methods for GNRs. Along these lines, electrical transport studies and spectroscopic investigations were envisioned as a major tool to monitor the changes brought about by the functional groups attached to the GNRs. GNRs were fabricated with the aid of V2O5 nanofibers or CdSe nanowires as an etching mask during the plasma etching of graphene. The resulting GNRs exhibited good electrical conductivity for ribbon widths as small as 10 nm. Moreover, the transport gap in the GNRs was found to scale inversely with the ribbon width. Scanning tunneling microscopy and surface enhanced Raman spectroscopy testified a good structural quality of the GNRs. Electrical characterization of GNRs revealed a pronounced hysteresis, which was exploited for the fabrication of electrically switchable GNR memory cells. Dynamic pulse response measurements demonstrated reliable switching between two conductivity states for clock frequencies of up to 1 kHz and pulse durations as short as 500 ns for >10^7 cycles. As the most likely switching mechanism, charge trapping within a water layer in the GNR surrounding could be identified. Furthermore, the optoelectronic properties of individual GNRs were studied by scanning photocurrent microscopy. The pronounced photocurrent signal close to the nanoribbon/metal contacts was found to be directly proportional to the conductance of the devices, suggesting that a local voltage source is generated at the nanoribbon/metal interface by the photo-thermoelectric Seebeck effect. The dominance of this mechanism over charge separation via built-in electrical fields was attributed to strong local heating of the GNRs by the laser spot, combined with the reduced thermal conduction capability of the nanoribbons in comparison to extended graphene sheets. Chemical functionalization of graphene and GNRs was attempted via different gas- and liquid-phase approaches. While electrical transport and Raman measurements revealed the presence of significant doping effects, it was not possible to unequivocally prove the covalent attachment of atoms at the GNR edges, neither through changes in the charge transport characteristics, nor via scanning microscopy studies.

EPFL2013

Fabrication and Optoelectronic Properties of Graphene Nanoribbons

Eberhard Ulrich Stützel

EPFL2013