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Nanoskiving Core-Shell Nanowires: A New Fabrication Method for Nano-optics

Martin Heiss, Eleonora Russo, Yannik Fontana

This paper describes the fabrication of functional optical devices by sectioning quantum-dot-in-nanowires systems with predefined lengths and orientations. This fabrication process requires only two steps, embedding the nanowires in epoxy and using an ultr ...

Amer Chemical Soc2014

Electrical characterization of high performance, liquid gated vertically stacked SiNW-based 3D FET biosensors

Mihai Adrian Ionescu, Montserrat Fernandez-Bolanos Badia, Hoël Maxime Guérin, Elizabeth Buitrago Godinez

A 3D vertically stacked silicon nanowire (SiNW) field effect transistor featuring a high density array of fully depleted channels gated by a backgate and one or two symmetrical platinum side-gates through a liquid has been electrically characterized for th ...

Elsevier Science Sa2014

In-plane fabrication of insulated gold-tip probes for electrochemical and force spectroscopy molecular experiments

Nico de Rooij, Terunobu Akiyama, Sebastian Gautsch, Peter Van der Wal, Yexian Wu

A new and versatile fabrication process of insulated gold tip probes for atomic force microscopy (AFM) is presented by Wu et al. (In-plane fabricated insulated gold-tip probe for electrochemical and molecular experiments, in: 2013 IEEE 26th International C ...

Elsevier2014

Single Suspended Silicon Nanowire Fabrication With Ultra-Deep Trench Etching

Davide Sacchetto, Zuhal Tasdemir

For the last 60 years, a dramatic downscaling of electronics has taken place. This trend of miniaturization has gained the support of the industry and the roadmap for downscaling and introducing new technologies in the semiconductor industry has been well ...

2014

Three-dimensional nanoscale study of Al segregation and quantum dot formation in GaAs/AlGaAs core-shell nanowires

Anna Fontcuberta i Morral, Martin Heiss, Eleonora Russo, Sonia Conesa Boj, Luca Francaviglia, Yannik Fontana

GaAs/Al-GaAs core-shell nanowires fabricated by molecular beam epitaxy contain quantum confining structures susceptible of producing narrow photoluminescence (PL) and single photons. The nanoscale chemical mapping of these structures is analyzed in 3D by a ...

American Institute of Physics2014

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One-Dimensional (1D) nanostructures have gained a considerable attention in the field of semiconductor technology for the past several decades. With the help of rapid development in the process technology, it becomes possible to scale these nanostructures ...

2014

InGaN/GaN Core-Shell Single Nanowire Light Emitting Diodes with Graphene-Based P-Contact

Hua Zhang, Gwénolé Jean Jacopin, Mehran Shahmohammadi

We report on the demonstration of MOVPE-grown single nanowire InGaN/GaN core-shell light emitting diodes (LEDs) with a transparent graphene contact for hole injection. The electrical homogeneity of the graphene-contacted LED has been assessed by electron b ...

Amer Chemical Soc2014

In this contribution I summarize our research on the formation of nanoparticles embedded in a-SiO2-x matrices. In particular, I focus on the Si diffusion in SiO2-x matrices, and amorphous-to-crystalline phase transition in Si nanoparticles embedded in SiO2 ...

Amer Inst Physics2014

High Sensitive Detection in Tumor Extracts with SiNW-FET in-Air Biosensors

Giovanni De Micheli, Sandro Carrara, Francesca Puppo

We have already demonstrated that high quality SiNW-FETs can be used to sense very low concentration range (fM) of pathogenic factors in controlled PBS. In this work we show, for the first time, Silicon Nanowire Field Effect Transistors (SiNW-FET) as biose ...

IEEE2014

Probing inhomogeneous composition in core/shell nanowires by Raman spectroscopy

Anna Fontcuberta i Morral, Federico Matteini, Esther Alarcon Llado, Martin Heiss, Eleonora Russo, Sonia Conesa Boj, Francesca Amaduzzi

Due to its non-destructive and its micro-spatial resolution, Raman spectroscopy is a powerful tool for a rapid structural and compositional characterization of nanoscale materials. Here, by combining the compositional dependence of the Raman peaks with the ...

American Institute of Physics2014

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