Elison de Nazareth Matioli, Jun Ma, Luca Nela, Catherine Erine, Minghua Zhu
In this letter, we present normally-off GaN-on-Si MOSFETs based on the combination of tri-gate with a short barrier recess to yield a large positive threshold voltage (VTH), while maintaining a low specific on resistance (RON,SP) and high current density ( ...
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