Concept

Tunnel diode

Related publications (101)

Demonstration of a Plasmonic Nonlinear Pseudodiode

Olivier Martin, Karim Achouri, Andrei Kiselev, Sergejs Boroviks

We demonstrate a nonlinear plasmonic metasurface that exhibits strongly asymmetric second-harmonic generation: nonlinear scattering is efficient upon excitation in one direction, and it is substantially suppressed when the excitation direction is reversed, ...

AMER CHEMICAL SOC2023

Millimeter-wave to near-terahertz sensors based on reversible insulator-to-metal transition in VO2

Mihai Adrian Ionescu, Teodor Rosca, Fatemeh Qaderi Rahaqi

In the quest for low power bio-inspired spiking sensors, functional oxides like vanadium dioxide are expected to enable future energy efficient sensing. Here, we report uncooled millimeter-wave spiking detectors based on the sensitivity of insulator-to-met ...

SPRINGERNATURE2023

Method for operating a frequency agile tunable self-injection locking laser system and self-injection locking laser system

Tobias Kippenberg, Anat Siddharth, Grigorii Likhachev

The invention relates to a Method for operating a frequency agile tunable self-injection locking laser system being formed by a laser device coupled to at least one optical resonator, wherein a diode current of a laser diode of the laser device is controll ...

2023

Charge sensing properties ofmonolithic CMOS pixel sensors fabricated in a 65 nm technology

Francesco Piro

In this work the initial performance studies of the first small monolithic pixel sensors dedicated to charged particle detection, called CE-65, fabricated in the 65nm TowerJazz Panasonic Semiconductor Company are presented. The tested prototypes comprise m ...

ELSEVIER2022

Modeling the electrical characteristic of InGaN/GaN blue-violet LED structure under electrical stress

Nicolas Grandjean, Jean-François Carlin, Camille Haller

The role of deep defects and their physical origin in InGaN/GaN LED are still widely investigated and debated, in particular their impact on the electrical and optical characteristics and on the reliability of the device. In this paper we evaluate the elec ...

PERGAMON-ELSEVIER SCIENCE LTD2022

Testing of planar hydrogenated amorphous silicon sensors with charge selective contacts for the construction of 3D-detectors

Sylvain Dunand, Matthew James Large

Hydrogenated Amorphous Silicon (a-Si:H) is a well known material for its intrinsic radiation hardness and is primarily utilized in solar cells as well as for particle detection and dosimetry. Planar p-i-n diode detectors are fabricated entirely by means of ...

2022

GaN vertical power devices on silicon substrates

Riyaz Mohammed Abdul Khadar

Gallium Nitride (GaN) is a wonder material which has widely transformed the world by enabling energy-efficient white light-emitting diodes. Over the past decade, GaN has also emerged as one of the most promising materials for developing power devices which ...

EPFL2021

Current Limiting in Overload Conditions of an LLC-Converter-Based DC Transformer

Drazen Dujic, Jakub Kucka

The dc transformers based on an LLC converter operated in open loop near resonant frequency have several crucial advantages compared to other topologies. These advantages are the stiff voltage ratio with a natural power flow, the dc grid isolation via medi ...

2021

Influence of the Dopant Gas Precursor in P-Type Nanocrystalline Silicon Layers on the Performance of Front Junction Heterojunction Solar Cells

Christophe Ballif, Quentin Thomas Jeangros, Laurie-Lou Senaud, Mathieu Gérard Boccard, Jan Haschke, Luca Massimiliano Antognini, Jean Cattin, Julie Amandine Dreon, Mario Joe Lehmann, Vincent Philippe Paratte

Silicon heterojunction solar cells can employ p-type hydrogenated nanocrystalline silicon nc-Si:H(p) on their front side, since these can provide better transparency and contact resistance compared to hydrogenated p-type amorphous silicon layers. We invest ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2021

High-Frequency GaN-on-Si power integrated circuits based on Tri-Anode SBDs

Elison de Nazareth Matioli, Remco Franciscus Peter van Erp, Halil Kerim Yildirim, Jun Ma, Luca Nela, Georgios Kampitsis

In this work, we report on the switching performance of AlGaN/GaN lateral Tri-Anode SBDs. The Tri-Anode architecture leads to a more than 50% reduction in the device charge with respect to conventional planar structure, confirmed both by capacitive and rev ...

IEEE2020

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