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The formation of feathery grains during semi-continuous casting of Al-alloys [1, 2] is an interesting problem from both practical and theoretical points of view. These structures are formed by a lamellar sequence of twinned and untwinned regions separated ...
The deposition of amorphous alumina (Al2O3) films on four inch wafers with high deposition rate (up to 50 nm/min) by an advanced HV-CVD technique is discussed. Amorphous nature of the films is confirmed by X-ray diffraction. Refractive index of the deposit ...
We have studied the magnetic behaviour of Fe3O4 nanowires (NWs) with two different diameter ranges, above 150 nm and below 60 nm, made by electrodeposition techniques into a polymeric template. The nanowires were characterized using various techniques, in ...
Spark Plasma Sintering (SPS) has been successfully applied in the sintering of nanocrystalline BaTiO3 and γ-Al2O3 in order to reach fully dense nanostructured ceramics at moderate pressure and temperature. BaTiO3 compacts with densities exceeding 97% and g ...
The nitridation of sapphire substrates was monitored in situ by reflection high-energy electron diffraction. The evolution of the lattice-mismatch evidences the formation of an AIN relaxed layer when exposing the sapphire surface heated at 850 degrees C to ...
A novel cathodic arc evaporation process operated in pure oxygen forms corundum-type micro-crystalline structures at temperatures below 600°C. Thermally stable crystalline solid solutions of corundum-type (Al 1-xCrx)2Oy have been prepared with this method ...
The trigonal structure of a new member of the eudialyte group was established from X-ray single-crystal diffraction, lambda(MoKalpha) = 0.71073 Angstrom; space group R3m; a = 14.153(9) Angstrom, c = 60.72(5) Angstrom, V = 10546.1 Angstrom(3); M = 3050; D-x ...
Dendrite tip temperature measurements are reported for the hypereutectic alloy Al-30% Si, directionally solidified as a bulk (non-composite) alloy, and also as the matrix of a fibrous metal matrix composite. Over the range of tip velocities studied (10-100 ...
GaInN and GaN were grown by molecular beam epitaxy on c-plane sapphire using NH3. 9 K photoluminescence performed on both GaInN thin layers and GaInN/GaN multiple-quantum wells (MQWs) exhibits narrow emission (similar to 50 meV linewidths). Transmission el ...
The analysis of the sapphire surface nitridation by in situ reflection high-energy electron diffraction evidences the formation of a relaxed AIN layer. Its role on the early stage of the GaN growth is investigated by transmission electron microscopy (TEM). ...
