Alfredo PasquarelloAlfredo Pasquarello studied physics at the
Scuola Normale Superiore
of Pisa and at the University of Pisa, obtaining their respective degrees in 1986. He obtained a doctoral degree at the EPFL in 1991 with a thesis on
Multiphoton Transitions in Solids
. Then, he moved to Bell Laboratories at Murray Hill (New Jersey), where he carried out postdoctoral research on the magnetic properties of carbon fullerenes. In 1993, he joined the Institute for Numerical Research in the Physics of Materials (IRRMA), where his activity involved first-principles simulation methods. In 1998, he was awarded the EPFL Latsis Prize for his research work on disordered silica materials. Succeeding in grant programs of the Swiss National Science Foundation, he then set up his own research group at IRRMA. In July 2003, he is appointed Professor in Theoretical Condensed Matter Physics at EPFL. Currently, he leads the Chair of Atomic Scale Simulation.
Anna Fontcuberta i Morral2014 Associate Professor at the Institut des Matériaux, EPFL
2008 Assistant Professor Tenure Track at the Institut des Matériaux, EPFL
2009 Habilitation in Physics, Technische Universität München
2005-2010 Marie Curie Excellence Grant Team Leader at Walter Schottky Institut, Technische Universität München, on leave from Centre National de la Recherche Scientifique (CNRS, France)
2004-2005 Visiting Scientist at the California Institute of Technology, on leave from CNRS; Senior Scientist and co-founder of Aonex Technologies (a startup company for large area layer transfer of InP and Ge on foreign substrates for the main application of multi-junction solar cells)
2003 Permanent Research Fellow at CNRS, Ecole Polytechnique, France
2001-2002 Postdoctoral Scholar at the California Institute of Technology
Study of wafer bonding and hydrogen-induced exfoliation processes for integration of mismatched materials in views of photovoltaic applications
Sponsor: Professor Harry A. Atwater
1998-2001 PhD in Materials Science, Ecole Polytechnique
Study of polymorphous silicon: growth mechanisms, optical and structural properties. Application to Solar Cells and Thin Film Transistors
Advisor: Pere Roca i Cabarrocas
1997-1998 Diplôme dEtudes Approfondis (D.E.A.) in Materials Science at Université Paris XI, France .
1993-1997 BA in Physics at Universitat de Barcelona
Mihai Adrian IonescuAdrian M. Ionescu is Full Professor at the Swiss Federal Institute of Technology, Lausanne, Switzerland. He received the B.S./M.S. and Ph.D. degrees from the Polytechnic Institute of Bucharest, Romania and the National Polytechnic Institute of Grenoble, France, in 1989 and 1997, respectively. He has held staff and/or visiting positions at LETI-CEA, Grenoble, France and INP Grenoble, France and Stanford University, USA, in 1998 and 1999. Dr. Ionescu has published more than 600 articles in international journals and conferences. He received many Best Paper Awards in international conferences, the Annual Award of the Technical Section of the Romanian Academy of Sciences in 1994 and the Blondel Medal in 2009 for contributions to the progress in engineering sciences in the domain of electronics. He is the 2013 recipient of the IBM Faculty Award in Engineering. He served the IEDM and VLSI conference technical committees and was the Technical Program Committee (Co)Chair of ESSDERC in 2006 and 2013. He is a member of the SATW. He is director of the Laboratory of Micro/Nanoelectronic Devices (NANOLAB).
Michele CeriottiMichele Ceriotti received his Ph.D. in Physics from ETH Zürich in 2010. He spent three years in Oxford as a Junior Research Fellow at Merton College. Since 2013 he leads the laboratory for Computational Science and Modeling in the Institute of Materials at EPFL. His research revolves around the atomic-scale modelling of materials, based on the sampling of quantum and thermal fluctuations and on the use of machine learning to predict and rationalize structure-property relations. He has been awarded the IBM Research Forschungspreis in 2010, the Volker Heine Young Investigator Award in 2013, an ERC Starting Grant in 2016, and the IUPAP C10 Young Scientist Prize in 2018.
Daniel OberliDaniel Oberli was born in Switzerland in 1957. After completing his undergraduate education in the Physics department at EPFL he was awarded a Fulbright Fellowship to enter the graduate program in physics from the University of Illinois at Urbana-Champaign. He received his degree of Doctor of Philosophy in Physics in 1988. His thesis topic was the intersubband dynamics of photo excited carriers in two-dimensional semiconductor structures, for which he developed an original experimental approach based on time-resolved Raman scattering of electronic excitations. From 1988 to 1989, he was a post-doctoral fellow at AT&T Bell laboratories, where he pursued his research interests on the ultra fast time-resolved optical properties of semiconductor microstructures under the leadership of Dr. J. Shah. In 1990, he joined the Walter Schottky Institute of the Technical University of Munich, where he evidenced and studied Fano resonances in the optical excitation spectra of semiconductor quantum wells. Since 1994, he has been in the Institute of Physics of the School of Basic Sciences at EPFL. His main research activities include the electronic and optical properties of low-dimensional semiconductor structures, in particular quantum wires, quantum wells and dots, Raman scattering by phonons and electronic excitations in nanostructures and the radiative properties of exciton-polaritons in semiconductor microcavities, including the dynamics of exciton-polaritons and their interactions. He is a member of the American Physical Society.
