Concept

Paschen's law

Related publications (64)

Humidity, temperature and membrane prestretch influence the dielectric breakdown strength of elastomer membranes. These three factors thus also influence the maximum force and strain that dielectric elastomer actuators (DEAs) can generate, as the Maxwell p ...

IOP PUBLISHING LTD2020

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Performance of dielectric elastomer actuators is closely related to its breakdown field. On the other hand, to enhance the available energy, multilayer configuration is needed to increase the amount of active material. However, multilayer configuration suf ...

IOP PUBLISHING LTD2020

Slip Ring Test Assembly With Increased Breakdown Voltage Limit for High-Voltage Bus Satellites

Ivo Furno, Alan Howling, Fabio Avino

In this article, a setup including a passive gas breakdown mitigation technique for satellite slip ring assemblies (SRAs) is introduced and tested. The setup features a central conducting ring, separated from two external conducting limiting discs (LDs) by ...

2020

Gas breakdown mitigation in satellite slip rings

Ivo Furno, Alan Howling, Fabio Avino, Paul Jeroen Laureis Martens

Direct current (DC) gas breakdown is experimentally investigated for high-voltage circular conductors and insulators that reproduce the main features of a satellite slip ring. Breakdown voltages are measured in the pressure range 10 ...

2019

Drastic breakdown field reduction in multilayer DEA

Yves Perriard, Yoan René Cyrille Civet, Jonathan André Jean-Marie Chavanne, Morgan Almanza

The electrical properties such as the electrical breakdown and the permittivity but also the softness of the elastomer are key factors for the performance of DEA. In order to have the best use of elastomer films, single-layer actuators have been deeply stu ...

2019

High-performance nanowire-based E-mode Power GaN MOSHEMTs with large workfunction gate metal

Elison de Nazareth Matioli, Jun Ma, Luca Nela, Minghua Zhu

In this work, we demonstrate high-performance Enhancement-mode (E-mode) GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors (MOS-HEMTs) on Si substrate based on sidewall depletion achieved by nanostructured gate with large work-function metal. ...

2019

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We report a novel process to achieve slanted field plate (S-FP), which is a field plate with a gradual increase thickness from gate edge towards drain - utilizing grayscale lithography on flowable oxide (FOX) in single process step, in which developed FOX ...

IEEE2019

Memristive Biosensors based on Full-size Antibodies and Antibody Fragments

Giovanni De Micheli, Sandro Carrara, Ioulia Tzouvadaki, Sébastien Naus

For the first time memristive biosensors developed by the incorporation of scAbs (single-chain antibody fragments) enabling label-free detection of free Prostate Specific Antigen (fPSA) for early-stage detection of prostate cancer (PC) are reported. In add ...

2019

High-performance nanowire-based E-mode Power GaN MOSHEMTs

Elison de Nazareth Matioli, Jun Ma, Luca Nela, Minghua Zhu

In this work, we demonstrate high-performance Enhancement-mode (E-mode) GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors (MOS-HEMTs) on Si substrate achieved by a nanostructured gate region in combination with a large work-function gate met ...

IEEE2019

Tri-gate technologies for high-performance power GaN devices

Jun Ma

GaN-based electronic devices have great potential for future power applications, thanks to their wide band-gap, high breakdown electric field, and high electron mobility. In addition, these devices can be integrated on large-size Si substrates and enable n ...

EPFL2019

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