Secondary ion mass spectrometry

Secondary-ion mass spectrometry (SIMS) is a technique used to analyze the composition of solid surfaces and thin films by sputtering the surface of the specimen with a focused primary ion beam and collecting and analyzing ejected secondary ions. The mass/charge ratios of these secondary ions are measured with a mass spectrometer to determine the elemental, isotopic, or molecular composition of the surface to a depth of 1 to 2 nm. Due to the large variation in ionization probabilities among elements sputtered from different materials, comparison against well-calibrated standards is necessary to achieve accurate quantitative results. SIMS is the most sensitive surface analysis technique, with elemental detection limits ranging from parts per million to parts per billion. History In 1910 British physicist J. J. Thomson observed a release of positive ions and neutral atoms from a solid surface induced by ion bombardment. Improved vacuum pump technology in the 1940s enabled t

Heterogeneous kinetics of some atmospherically relevant reactions

A low pressure reactor (Knudsen cell) coupled to molecular beam modulated mass spectrometry was used to study the heterogeneous kinetics of the following three systems: (1) NO2 on amorphous carbon, (2) H2O vapor on ice and (3) gaseous HCl on ice. The first system was investigated at ambient temperature while the two last ones were investigated at temperatures typical of the stratosphere, that is roughly between 160 and 220K. The solid phase samples correspond to model surfaces whose physicochemical properties come very close to the ones of atmospheric particulates. Firstly, we studied the interaction of gaseous NO2 with three different commercial samples of amorphous carbon having widely differing physicochemical properties. Using in situ laser-induced fluorescence, the only major product was unambiguously determined to be NO with the oxidation product of carbon apparently remaining on the surface. Probing the gas phase with mass spectrometry (MS), both pulsed valve dosing and steady state experiments were performed and revealed a complex reaction mechanism for both the uptake as well as product formation. The initial uptake coefficient γo for NO2 was (6.4±2.0)·10-2 and proved to be identical within experimental uncertainty for all three types of amorphous carbon. The initial NO2 uptake rate was independent of the mass of the carbon sample and scaled with its external geometrical surface. Applying a simple chemical kinetic model to both pulsed dosing and steady state experiments resulted in an effective surface for uptake on amorphous carbon ranging between a factor of 2.8 to 8.4 larger than the geometrical surface area, but inversely proportional to the measured BET surface area of the three types of amorphous carbon. This means that the amorphous carbon with the highest BET surface (FW2) had the lowest external surface for NO2 adsorption. The chemical kinetic model included competing processes between Langmuir-type adsorption and inhibition controlling the adsorption kinetics of NO2 and revealed that the NO generation rate differed greatly between the three carbon samples examined. All samples showed saturation effects of differing degree that were partially reversible through prolonged pumping at 10-4 Torr and/or heating. Virgin amorphous carbon samples did not take up H2O vapor at 20 mTorr, and no HONO and/or HNO3 was detected in simultaneous NO2/H2O exposure experiments. CO and CO2 were detected when a sample previously exposed to NO2 was heated by an incandescent lamp. Moreover, upon heating such a sample, a MS signal m/e 62 originating from NO3 and/or N2O5 was detected. In addition to the experiments conducted on the three commercial carbon samples, we carried out uptake experiments of NO2 on acetylene soot. Originating from the flame of an acetylene burner, this soot was freshly deposited on glass dishes before each experiment. The initial uptake coefficient γo for NO2 was measured to be (3.0±1.1)·10-2 is smaller by a factor of two compared to γo observed in the uptake on commercial samples whose mass was a factor of 10 higher. In addition to NO, a net formation of HONO (m/e 47) was observed. This HONO formation is strongly dependent on the instantaneous water desorption from the sample as well as on the NO2 partial pressure in the reactor. On the other hand, it is not enhanced by an external water flow which did not show any interaction with the carbon sample. Upon heating the sample using an incandescent lamp, significant amounts of water desorbed, suggesting that the water vapor had condensed into the micropores of the soot during combustion. No quantitative results are presented yet. However, as no correlation between HONO formation and NO partial pressure has been observed so far, we suggest a reaction mechanism that only involves NO2 and H2O but no NO: 2 NO2 (g) + H2O HONO + HNO3 In a second study, the kinetics of condensation and evaporation of water on ice was determined in the temperature range of 170 to 220K. The rate of evaporation Fev corresponds to the evaporation of 70±10 monolayers of H2O per second at 200K. The condensation rate constant kc has a negative activation energy of -3.l±1.5kcal/mol which is significantly larger than the one recently measured by Haynes et al. We report the first real time kinetic measurements of water condensation on ice at stratospherically relevant temperatures. At temperatures above 160K, pulsed dosing experiments show a dose dependence of the condensation rate coefficient. For example, the condensation rate coefficient increases by a factor of five with a 1000 fold increase of the H2O dose from 1·1015 to 1·1018 molecules per pulse at 180K. This pressure dependence of the condensation rate constant may be explained by an autocatalytic mechanism involving the competition of two condensation channels. These two channels feed two different surface species, one of which leads to autocatalytic condensation. This mechanism gives insight into the manner in which a gas phase molecule is stepwise incorporated into tetrahedrally coordinated bulk ice. In a third and ongoing study, the uptake kinetics of HCl on ice has been investigated by pulsed valve experiments in the temperature range of 180 to 210K and are discussed as a function of the state of the surface. In fact, some of the pulsed valve experiments present a relaxation to a steady state level. It is shown that this level originates from the evaporation of a liquid solution corresponding to a temperature specific HCl concentration. The threshold of the injected dose leading to this solution layer is estimated to be 8·1014 molecules. This threshold corresponding to a fraction of a monolayer may be explained by the formation of small domains along grain boundaries or other lattice imperfections. Within detection limit, no difference in keff has been observed for pulses on the solution or on a previously exposed sample without formation of the solution. In the case of pulses forming a solution layer, a fraction of 20±20% of the injected molecules remains permanently adsorbed on the surface. In the temperature range from 210 to 180K, the pulsed valve experiments yield values of keff roughly between 5 and 25s-1 and an activation energy of -1.6±0.7kcal/mol which are consistent with the values observed by Flueckiger in steady state experiments using the 15mm escape aperture (kuni varying from 12 to 23s-1 and an activation energy of -1.9±0.25 kcal/mol).

EPFL1996

Electronic properties of nano-crystalline titanium dioxide thin films

Alain Bally

Titanium dioxide is a cheap, chemically stable and non-toxic material. However its electrical properties are unstable and it is a modest semiconductor and a mediocre insulator. For several applications it would be interesting to make it either more insulating or more conducting. The goal of this work was to modify the electrical properties of nano-crystalline TiO2 thin films deposited by reactive sputtering and to understand the mechanism leading to these modifications. The principal factors that influence the electrical conductivity are on the one hand the concentration and nature of the chemical impurities incorporated in TiO2, and on the other hand the morphology of the thin films. The study was split into two parts. The fist part describes the modifications of the sputtered material obtained by chemical doping of the TiO2 thin films. Niobium, cerium, iron, and fluorine were incorporated successfully in TiO2. The second part describes the modifications obtained by modifying the reactive gas used during the sputtering process: thus oxygen was substituted with water vapor. Several analysis techniques have been used to characterize the TiO2 thin films. They are essentially divided in four categories. The chemical analyses included electron probe microanalyses, x-ray photoemission spectroscopy, and secondary ion mass spectrometry. The structure and morphology analyses of thin films were carried out with x-ray diffraction and atomic force microscopy. The electrical properties in dc or ac mode were measured between room temperature and 350°C. Finally optical transmission provided information on the electronic states and morphology of the thin films. With an appropriate choice of impurities, titanium dioxide can be made more insulating (TiO2:Ce), more conducting with an n-type electrical conductivity (TiO2:Nb) or p-type electrical conductivity (TiO2:Fe). Chemical doping is also the cause of important structure and morphology changes, for example it can force the transformation from the anatase to the rutile structure. It is shown in particular that dopant atoms generate defects such as oxygen vacancies. These defects impede the variation of the electrical conductivity produced by the impurities, thus, in spite of dopant concentration in the percent range, the variation of the electrical conductivity is an increase or a decrease of three order of magnitude at most when compared with undoped TiO2. Thin films deposited with water vapor as the reactive gas present an increase in the electrical conductivity by height order of magnitude compared to samples prepared with oxygen in similar conditions. No atom other than titanium or oxygen could be detected in the thin films in significant concentration. The dramatic conductivity increase is due to the injection inside TiO2 grains of electrons donated by unsaturated titanium atoms lying on the grain surface. A nanometric grain size is a requirement to make such high doping levels possible. Depending on the impurities or reactive gas selected, titanium dioxide can be made either into a good insulator with a high breakdown field and a high permittivity or into a reasonably conducting, transparent film. The electrical conductivity of the samples prepared for this study cover the range from 10-10 to 103 S m-1.

EPFL1999

Characterization and Development of Fired Passivating Contacts for Silicon Solar Cells

Mario Joe Lehmann

One of the key elements to improve mainstream crystalline silicon (c-Si) solar cell performance is surface passivation, which is at the center of the ongoing transition from cells with direct silicon-metal contacts to full area passivating contacts. In theory, these contacts combine an optimal passivation and current extraction. Among those, the fired passivating contact (FPC) studied in this thesis is a promising candidate. Based on a 1.3 nm thin tunneling oxide capped with a doped SiCx layer, it is compatible with the high temperature firing process typically used in industry for metallization. Moreover, its fabrication does not require a long annealing step, reducing its thermal budget.In this thesis, effective minority carrier lifetime measurements were combined with advanced characterization techniques, such as Secondary Ion Mass Spectrometry (SIMS), to investigate the surface passivation mechanism. Chemical passivation was found to be predominant, achieved through hydrogen diffusion from a SiNx:H reservoir layer to the c-Si/SiOx interface where it accumulates. The composition of the interfacial oxide was found to influence the surface passivation quality too, reaching implied open circuit voltage (iVoc) values around 710, 720 and 740 mV with chemical, UV-O3 and thick thermal oxides, respectively. After firing, the boron-doped SiCx(p) layer was observed to consist of 5-10 nm large c-Si grains embedded in a carbon rich amorphous matrix.Surprisingly, it was found that the firing step can induce shallow bulk defects within the used Float-Zone (FZ) wafers, which can be passivated by hydrogen. Kinetics experiments indicate a rapid passivation of the c-Si/SiOx interface, happening in less than 1 min, followed by a slower passivation of the bulk. The kinetics of the hydrogenation process seem to be limited by the available hydrogen supply, rather than by its diffusivity within the bulk. In addition, the possibility to hydrogenate both surfaces with a SiNx:H layer deposited on only one side of the wafer was demonstrated, providing further flexibility to the fabrication process of FPC based solar cells.Pursuing the same goal, diffusion of fluorine from SiCx(p):F layers upon firing was tested. The results indicate that this approach can also passivate the c-Si/SiOx interface even though the iVoc after firing seems to be limited by the creation of shallow bulk defects. Nevertheless, values over 730 mV could be reached with UV-O3 SiOx layers upon subsequent hydrogenation.Regarding the stability of this passivation, no degradation was observed for FPCs upon 80 days of light soaking at 80°C. Moreover, it remained stable upon thermal treatments of 30 min up to 170°C.Finally, metallization of these FPCs was studied. A layer stack with a total thickness of ~90 nm was developed to be contacted by a screen printed Al paste fired through the SiNx:H layer. Unfortunately, so far good contact resistivities could only be achieved at the expense of passivation. Closer microstructural investigations revealed diffusion of Al from the metallic paste into the SiNx:H layer, forming an Al-N compound, and in some cases accumulating in the SiOx layer. Nevertheless, using a low temperature metallization approach, solar cells featuring co-fired SiCx(n) and SiCx(p) FPCs at the front and rear were processed, reaching up to 20.5% in efficiency. This corroborates the potential of FPCs for high efficiency solar cells with a simple and low-cost fabrication process.

EPFL2022