Concept

Pixel 6

Related publications (56)

Evaluation of HPK n plus -p planar pixel sensors for the CMS Phase-2 upgrade

Varun Sharma, Konstantin Androsov, Xin Chen, Rakesh Chawla, Werner Lustermann, Andromachi Tsirou, Alexis Kalogeropoulos, Andrea Rizzi, Thomas Muller, David Vannerom, Albert Perez, Alessandro Caratelli, François Robert, Davide Ceresa, Yong Yang, Ajay Kumar, Ashish Sharma, Georgios Anagnostou, Kai Yi, Jing Li, Stefano Michelis, David Parker, Martin Fuchs

To cope with the challenging environment of the planned high luminosity upgrade of the Large Hadron Collider (HL-LHC), scheduled to start operation in 2029, CMS will replace its entire tracking system. The requirements for the tracker are largely determine ...

Amsterdam2023

MALTA-Cz: a radiation hard full-size monolithic CMOS sensor with small electrodes on high-resistivity Czochralski substrate

Edoardo Charbon, Francesco Piro, Ashish Sharma

Depleted Monolithic Active Pixel Sensor (DMAPS) sensors developed in the Tower Semiconductor 180 nm CMOS imaging process have been designed in the context of the ATLAS ITk upgrade Phase-II at the HL-LHC and for future collider experiments. The "MALTA-Czoch ...

Bristol2023

reference data for "A Critical Comparison of Annual Glare Simulation Methods"

Jan Wienold, Stephen William Wasilewski

Scene and reference results files for: "A Critical Comparison of Annual Glare Simulation Methods" Stephen Wasilewski, Jan Wienold, Marilyne Andersen 2022 Buildsim Nordic, Copenhagen Contents: 01-06*.tar.gz: reference simulation image archives, one ...

Zenodo2022

A 500 x 500 Dual-Gate SPAD Imager With 100% Temporal Aperture and 1 ns Minimum Gate Length for FLIM and Phasor Imaging Applications

Edoardo Charbon, Claudio Bruschini, Andrei Ardelean, Paul Mos, Arin Can Ülkü, Michael Alan Wayne

In this article, we report on SwissSPAD3 (SS3), a 500 x 500 pixel single-photon avalanche diode (SPAD) array, fabricated in 0.18-mu m CMOS technology. In this sensor, we introduce a novel dual-gate architecture with two contiguous temporal windows, or gate ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Comparison of Two in Pixel Source Follower Schemes for Deep Subelectron Noise CMOS Image Sensors

Christian Enz, Assim Boukhayma, Antonino Caizzone, Andrea Kraxner, Minhao Yang, Daniel Mathias Bold

This paper compares two in-pixel source follower stage designs for low noise CMOS image sensors embedded both on a same 5 mm by 5 mm chip fabricated in a 180 nm CIS process. The presented chip embeds two pixel variants, one based on a body-effect-canceled ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

A Pixel Design of a Branching Ultra-Highspeed Image Sensor

Edoardo Charbon

A burst image sensor named Hanabi, meaning fireworks in Japanese, includes a branching CCD and multiple CMOS readout circuits. The sensor is backside-illuminated with a light/charge guide pipe to minimize the temporal resolution by suppressing the horizont ...

2021

The CMS Phase-1 pixel detector upgrade

Qian Wang, Varun Sharma, Konstantin Androsov, Xin Chen, Davide Di Croce, Rakesh Chawla, Tian Cheng, Werner Lustermann, Andromachi Tsirou, Andrea Rizzi, Jessica Prisciandaro, David Vannerom, Abhisek Datta, Albert Perez, Alessandro Caratelli, François Robert, Davide Ceresa, Yong Yang, Ajay Kumar, Georgios Anagnostou, Matthias Weber, Francesco Fiori, Kai Yi, Jing Li, Hui Wang, Giorgia Rauco, Ali Harb, Stefano Michelis, François Bianchi

The CMS detector at the CERN LHC features a silicon pixel detector as its innermost subdetector. The original CMS pixel detector has been replaced with an upgraded pixel system (CMS Phase-1 pixel detector) in the extended year-end technical stop of the LHC ...

2021

Hessian Splines For Scanning Transmission X-Ray Microscopy

Michaël Unser, Thomas Jean Debarre

Scanning transmission X-ray microscopy (STXM) produces images in which each pixel value is related to the measured attenuation of an X-ray beam. In practice, the location of the illuminated region does not exactly match the desired uniform pixel grid. This ...

IEEE2020

Shear measurement bias: I. Dependencies on methods, simulation parameters, and measured parameters

Frédéric Courbin, Marc Gentile

We present a study of the dependencies of shear bias on simulation (input) and measured (output) parameters, noise, point-spread function anisotropy, pixel size, and the model bias coming from two different and independent galaxy shape estimators. We used ...

EDP SCIENCES S A2020

Health monitoring device

Christian Enz, Assim Boukhayma, Antonino Caizzone

The invention relates to a photoplethysmography (PPG) sensing device comprising - a pulsed light source, - at least one pixel to create photo-generated electrons, synchronized with said pulsed light source. It is mainly characterized in that each pixel com ...

2019

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