Concept

Phase-change memory

Related publications (90)

Electric Field Effects in the Skyrmion Lattice Hosting Magnet Cu2OSeO3

Magnetic skyrmions have garnered much attention in recent years because of their non trivial topology and potential to be used in next generation memory devices. They may exist individually or as a lattice of skyrmions(SkL). A number of investigations have ...

2018

RRAM Crossbar Arrays for Storage Class Memory Applications : Throughput and Density Considerations

Alexandre Sébastien Julien Levisse

As more and more high density memories are required to satisfy the Internet of Things ecosystem, academics and industrials are looking for an intermediate solution to fill the gap between DRAM and Flash NAND in the memory hierarchy. The emergence of Resist ...

2018

RRAM Crossbar Arrays for Storage Class Memory Applications : Throughput and Density Considerations

Alexandre Sébastien Julien Levisse

IEEE2018

Prospects for energy-efficient edge computing with integrated HfO2-based ferroelectric devices

Mihai Adrian Ionescu, Igor Stolichnov

Edge computing requires highly energy efficient microprocessor units with embedded non-volatile memories to process data at IoT sensor nodes. Ferroelectric non-volatile memory devices are fast, low power and high endurance, and could greatly enhance energy ...

IEEE2018

Atomistic Simulations of the Crystallization and Aging of GeTe Nanowires

Davide Campi, Edoardo Baldi

Nanowires made of chalcogenide alloys are of interest for use in phase-change nonvolatile memories. For this application, insights into the thermal properties of such nanowires and, in particular, into the crystallization kinetics at the atomic level are c ...

American Chemical Society2017

Wafer-scale reliable switching memory based on 2-dimensional layered organic-inorganic halide perovskite

Recently, organic-inorganic halide perovskite (OHP) has been suggested as an alternative to oxides or chalcogenides in resistive switching memory devices due to low operating voltage, high ON/OFF ratio, and flexibility. The most studied OHP is 3-dimensiona ...

Royal Soc Chemistry2017

First-principles calculation of lattice thermal conductivity in crystalline phase change materials: GeTe, Sb2Te3, and Ge2Sb2Te5

Davide Campi, Lorenzo Paulatto, Giorgia Fugallo

Thermal transport is a key feature for the operation of phase change memory devices which rest on a fast and reversible transformation between the crystalline and amorphous phases of chalcogenide alloys upon Joule heating. In this paper we report on the ab ...

Amer Physical Soc2017

Endurance Management for Resistive Logic-In-Memory Computing Architectures

Giovanni De Micheli, Mathias Soeken, Pierre-Emmanuel Julien Marc Gaillardon

Resistive Random Access Memory (RRAM) is a promising non-volatile memory technology which enables modern in-memory computing architectures. Although RRAMs are known to be superior to conventional memories in many aspects, they suffer from a low writ ...

Ieee2017

Control of Resistive Switching in Mott Memories Based on TiN/AM4Q8/TiN MIM Devices

Giovanni De Micheli, Davide Sacchetto, Pierre-Emmanuel Julien Marc Gaillardon, Jury Sandrini

The family of AM4Q8 chalcogenide Mott insulators gained attention in recent years for its application opportunities. Here, we explore and validate the resistive switching mechanism of thin-film of GaV4S8 sandwich ...

Electrochemical Society2017

Nonvolatile Memory Crossbar Arrays for Non-von Neumann Computing

Irem Boybat Kara, Severin Sidler, Carmelo Di Nolfo

In the conventional von Neumann (VN) architecture, data—both operands and operations to be performed on those operands—makes its way from memory to a dedicated central processor. With the end of Dennard scaling and the resulting slowdown in Moore’s law, th ...

Springer India2017

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