Concept

Phase-change memory

Related publications (90)

Fabrication, Characterization and Integration of Resistive Random Access Memories

The functionalities and performances of today's computing systems are increasingly dependent on the memory block. This phenomenon, also referred as the Von Neumann bottleneck, is the main motivation for the research on memory technologies. Despite CMOS tec ...

EPFL2017

Reducing circuit design complexity for neuromorphic machine learning systems based on Non-Volatile Memory arrays

Yusuf Leblebici, Alessandro Fumarola

Machine Learning (ML) is an attractive application of Non-Volatile Memory (NVM) arrays [1,2]. However, achieving speedup over GPUs will require minimal neuron circuit sharing and thus highly area-efficient peripheral circuitry, so that ML reads and writes ...

2017

A High-performance FPGA Architecture Using One-Level RRAM-based Multiplexers

Giovanni De Micheli, Pierre-Emmanuel Julien Marc Gaillardon, Xifan Tang

Resistive Random Access Memory (RRAM)-based routing multiplexers, built using a one-level structure, are significantly more delay efficient than state-of-art SRAM-based implementations thanks to their lower achievable on-state resistance. In addition, the ...

2017

Nanoionics Phenomena and Devices with Oxide Thin Films

Mahmoud Hadad

The number of studies on solid state ionic thin films (Nanoionics) has increased dramatically over last decades due to their high potential in micro and nanoscale technologies. Micro solid oxide fuel cells (micro-SOFC), and resistive switching memories (Re ...

EPFL2017

Critical scattering and incommensurate phase transition in antiferroelectric PbZrO3 under pressure

Alexander Tagantsev

Antiferroelectric lead zirconate is the key ingredient in modern ferroelectric and piezoelectric functional solid solutions. By itself it offers opportunities in new-type non-volatile memory and energy storage applications. A highly useful and scientifical ...

Springer Nature2017

Accelerating Machine Learning with Non-Volatile Memory: exploring device and circuit tradeoffs

Alessandro Fumarola, Severin Sidler

Large arrays of the same nonvolatile memories (NVM) being developed for Storage-Class Memory (SCM) such as Phase Change Memory (PCM) and Resistance RAM (ReRAM) - can also be used in non-Von Neumann neuromorphic computational schemes, with device conductanc ...

Ieee2016

Multilevel-cell phase-change memory

Aravinthan Athmanathan

In the modern digital era of big data applications, there is an ever-increasing demand for higher memory capacity that is both reliable and cost effective. In the domain of non-volatile memory systems, Flash-based storage devices have dominated the consume ...

EPFL2016

Multilevel-Cell Phase-Change Memory: A Viable Technology

Milos Stanisavljevic, Aravinthan Athmanathan, Evangelos Eleftheriou

In order for any non-volatile memory (NVM) to be considered a viable technology, its reliability should be verified at the array level. In particular, properties such as high endurance and at least moderate data retention are considered essential. Phase-ch ...

Ieee-Inst Electrical Electronics Engineers Inc2016

Multi-Objective BDD Optimization for RRAM based Circuit Design

Mathias Soeken

Resistive switching property enables various promising applications such as design of non-volatile in-memory computing devices which has attracted high attention to Resistive Random Access Memories (RRAMs). In this work, we present a multi-objective BDD op ...

IEEE2016

Fast Logic Synthesis for RRAM-based In-Memory Computing using Majority-Inverter Graphs

Mathias Soeken, Pierre-Emmanuel Julien Marc Gaillardon

Resistive Random Access Memories (RRAMs) have gained high attention for a variety of promising applications especially the design of non-volatile in-memory computing devices. In this paper, we present an approach for the synthesis of RRAM-based logi ...

IEEE2016

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