Concept

Quantum logic gate

Related publications (291)

Quantum state manipulation of single atom magnets using the hyperfine interaction

Harald Brune, François Patthey, Edgar Fernandes, Donat Fabian Natterer, Patrick Robert Forrester, Dante Philippe Sblendorio

The magnetic quantum states of holmium single atom magnets on MgO(100) have proven extremely robust when exposed to high magnetic fields and temperatures up to 35 K. Here we address the stability of Ho at small magnetic fields, where the hyperfine interact ...

AMER PHYSICAL SOC2019

All-Microwave Control and Dispersive Readout of Gate-Defined Quantum Dot Qubits in Circuit Quantum Electrodynamics

Pasquale Scarlino

Developing fast and accurate control and readout techniques is an important challenge in quantum information processing with semiconductor qubits. Here, we study the dynamics and the coherence properties of a GaAs/AlGaAs double quantum dot charge qubit str ...

2019

Steady state in experimentally produced turbidity current under a large amount of suspension supply

Giovanni De Cesare, Shun Nomura, Jumpei Hitomi

Turbidity current is generated in an inclined lock-gate flume under a large amount of suspension supply. By opening the gate, turbidity current generates and flows to downstream. The turbidity current maintains its interface structure and progresses with c ...

2019

A Magnet-Based Timing System to Detect Gate Crossings in Alpine Ski Racing

Kamiar Aminian, Benedikt Fasel

In alpine skiing, intermediate times are usually measured with photocells. However, for practical reasons, the number of intermediate cells is limited to three⁻four, making a detailed timing analysis difficult. In this paper, we propose and validate a magn ...

2019

Benefits and Challenges of Designing Cryogenic CMOS RF Circuits for Quantum Computers

Edoardo Charbon, Harald Arjan Robert Homulle, Fabio Sebastiano

Accurate and low-noise generation and amplification of microwave signals are required for the manipulation and readout of quantum bits (qubits). A fault-tolerant quantum computer operates at deep cryogenic temperatures (i.e.,

IEEE2019

Structural Rewriting in XOR-Majority Graphs

Giovanni De Micheli, Mathias Soeken, Zhufei Chu

In this paper, we present a structural rewriting method for a recently proposed XOR-Majority graph (XMG), which has exclusive-OR (XOR), majority-of-three (MAJ), and inverters as primitives. XMGs are an extension of Majority-Inverter Graphs (MIGs). Previous ...

ASSOC COMPUTING MACHINERY2019

On the Dynamic Performance of Laterally Gated Transistors

Elison de Nazareth Matioli, Armin Jafari, Catherine Erine, Giovanni Santoruvo

Laterally gated transistors have been proposed as an innovative device architecture in which a semiconducting channel is controlled by side gates. In this sense, the gate can either be in contact with the sidewalls or be separated by a gap. In the latter c ...

2019

Co-integrated Subthermionic 2D/2D WSe2/SnSe2 Vertical Tunnel FET and WSe2 MOSFET on same flake: towards a 2D/2D vdW Dual-Transport Steep Slope FET

Mihai Adrian Ionescu, Matteo Cavalieri, Nicolò Oliva

In this work we report the fabrication, co-integration and resulting performance of 2D/2D van der Waals (vdW) Vertical p-type Tunnel FETs and p-MOSFETs in a WSe2/SnSe2 material system. We demonstrate the best ever reported combined performance in terms of ...

IEEE2019

High-performance normally-off tri-gate GaN power MOSFETs

Elison de Nazareth Matioli, Jun Ma, Luca Nela, Minghua Zhu

In this work, we present the investigation of the combination of gate recess and tri-gate structures to achieve high performance normally-off GaN-on-Si MOSFETs with high positive threshold voltage ( VTH ), low specific on resistance ( RON,SP ) and high out ...

IEEE2019

Modeling Interface Charge Traps in Junctionless FETs, Including Temperature Effects

Jean-Michel Sallese, Farzan Jazaeri, Amin Rassekh

In this article, an analytical predictive model of interface charge traps in symmetric, long-channel double-gate, junctionless transistors (JLTs) is proposed based on a charge-based model. Interface charge traps arising from exposure to chemicals, high-ene ...

2019

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