Industrial Plasmas: Sheath Formation and Plasma Etching

This lecture covers the formation of sheaths in industrial plasmas, discussing the transition between plasma and walls, the directional ion flux for plasma etching, and the importance of sheath properties for integrated circuit manufacturing. It also explores the use of DC and AC currents in plasma processing, the Bohm criterion for ion velocity, and the ion bombardment energy. The lecture concludes with insights into large-area RF reactors for electronics production and plasma-enhanced chemical vapor deposition of thin film silicon.