Plasma Generation and Ion Sheath in Etching

This lecture covers the theoretical concepts of plasma generation, including the definition of a plasma as an ionized gas with equal densities of electrons and ions. It explains the role of radio frequency power in sustaining the plasma and the ion sheath in the etching process. The instructor discusses the DC bias voltage, plasma potential, and ion sheath thickness, emphasizing the importance of electrode area design for efficient ion bombardment on the wafer. The lecture also delves into the plasma equivalent electric circuit and the considerations for maximizing etching on the lower electrode while maintaining uniformity. Overall, the lecture provides a comprehensive understanding of plasma behavior in micro and nanofabrication processes.