Publication

Uniaxially tensile strained accumulation-mode gate-all-around Si nanowire nMOSFETs

Mihai Adrian Ionescu, Didier Bouvet, Wladyslaw Grabinski, Mohammad Najmzadeh
2011
Conference paper

Abstract

In this work we report an experimental study on accumulation-mode (AM) gate-all-around (GAA) nMOSFETs based on silicon nanowires with uniaxial tensile strain. Their electrical characteristics are studied from room temperature up to ~400 K and carrier mobility, flat-band and threshold voltages are extracted and investigated.

Official source

https://infoscience.epfl.ch/record/169389?ln=en

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Uniaxially tensile strained accumulation-mode gate-all-around Si nanowire nMOSFETs

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