Publications by Federico Faccio

A Dual-Edge Pulsewidth Modulator for Fast Dynamic Response DC-DC Converters

Maher Kayal, Adil Koukab, Giacomo Ripamonti, Stefano Michelis, Federico Faccio

Voltage regulator modules are dc-dc converters that power modern microprocessors. They must exhibit a fast dynamic response, in order to achieve satisfactory regulation performance in spite of the rapid load current variations. The pulsewidth modulator is ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2019

A Reliability and Efficiency Optimization System for Hard-Switching DC/DC Converters

Maher Kayal, Adil Koukab, Giacomo Ripamonti, Stefano Michelis, Federico Faccio

The Large Hadron Collider experiments at CERN will use power distribution schemes relying on integrated buck DC/DC converters. Due to the radiation-hardness requirements, the devices used for the development of such converters will have a voltage rating wh ...

IEEE2018

Characterization and Modeling of Gigarad-TID-Induced Drain Leakage Current of 28-nm Bulk MOSFETs

Christian Enz, Farzan Jazaeri, Chunmin Zhang, Federico Faccio

This paper characterizes and models the effects of total ionizing dose (TID) up to 1 Grad(SiO2) on the drain leakage current of nMOSFETs fabricated with a commercial 28-nm bulk CMOS process. Experimental comparisons among individual nMOSFETs of various siz ...

2018

Characterization of GigaRad Total Ionizing Dose and Annealing Effects on 28-nm Bulk MOSFETs

Christian Enz, Claudio Bruschini, Farzan Jazaeri, Chunmin Zhang, Alessandro Pezzotta, Federico Faccio

This paper investigates the radiation tolerance of 28-nm bulk n and pMOSFETs up to 1 Grad of total ionizing dose (TID). The radiation effects on this commercial 28-nm bulk CMOS process demonstrate a strong geometry dependence as a result of the complex int ...

2017

GigaRad total ionizing dose and post-irradiation effects on 28 nm bulk MOSFETs

Christian Enz, Claudio Bruschini, Farzan Jazaeri, Chunmin Zhang, Alessandro Pezzotta, Federico Faccio

The DC performance of both n- and pMOSFETs fabricated in a commercial-grade 28 nm bulk CMOS process has been studied up to 1 Grad of total ionizing dose and at post-irradiation annealing. The aim is to assess the potential use of such an advanced CMOS tech ...

IEEE2016

Impact of GigaRad Ionizing Dose on 28 nm bulk MOSFETs for future HL-LHC

Christian Enz, Claudio Bruschini, Farzan Jazaeri, Chunmin Zhang, Alessandro Pezzotta, Federico Faccio

The Large Hadron Collider (LHC) running at CERN will soon be upgraded to increase its luminosity giving rise to radiations reaching the level of GigaRad Total Ionizing Dose (TID). This paper investigates the impact of such high radiation on transistors fab ...

IEEE2016