Publications by Andras Kis | EPFL Graph Search

Comprehensive benchmarking and user guide for the characterization of CVD-grown transition metal chalcogenides

Since the discovery of graphene in 2004, there has been rapid progress in research on two-dimensional (2D) material’s potential applications with significant impact. Efforts to bring 2D materials closer to industrial production, quality assessment, and sta ...

Academia.edu Journals2025

Spin polarization detection via chirality-induced tunnelling currents in indium selenide

Andras Kis, Gabriele Pasquale

Chirality, a basic property of symmetry breaking, is crucial for fields such as biology and physics. Recent advances in the study of chiral systems have stimulated interest in the discovery of symmetry-breaking states that enable exotic phenomena such as s ...

Springer Science and Business Media LLC2025

Enhancing interlayer exciton dynamics by coupling with monolithic cavities via the field-induced Stark effect

Andras Kis, Fedele Tagarelli, Edoardo Lopriore

Optical microcavities provide a powerful and versatile framework for manipulating the dynamics of photonic emission from optically active materials through light recirculation. Spatially indirect interlayer excitons (IXs) exhibit broad tunability of their ...

2025

An Investigation of VO2 Nanowire Arrays for Integrated Sensing. From Non-Stochastic Nanowires to Stochastic Nanostructures

Mihai Adrian Ionescu, Andras Kis, Igor Stolichnov

This paper presents a novel nanoscale platform based on vanadium dioxide (VO2) two-terminal devices shaped like nanowires (NWs). For the first time we report CMOS compatible VO2 two-terminal devices with little-to-no stochasticity in the absence of electro ...

IEEE2025

Polarization-Dependent Plasmon-Induced Doping and Strain Effects in MoS 2 Monolayers on Gold Nanostructures

Andras Kis, Guilherme Migliato Marega, Zhenyu Wang

Monolayers of transition-metal dichalcogenides, such as MoS 2 , have attracted significant attention for their exceptional electronic and optical properties, positioning them as ideal candidates for advanced optoelectronic applications. Despite their stron ...

American Chemical Society (ACS)2025

Electrically tunable giant Nernst effect in two-dimensional van der Waals heterostructures

Andras Kis, Guilherme Migliato Marega, Zhe Sun, Gabriele Pasquale

The Nernst effect, a transverse thermoelectric phenomenon, has attracted significant attention for its potential in energy conversion, thermoelectrics and spintronics. However, achieving high performance and versatility at low temperatures remains elusive. ...

2024

Composition-tunable transition metal dichalcogenide nanosheets via a scalable, solution-processable method

Kevin Sivula, Andras Kis, Marina Caroline Michèle Caretti, Victor Carle Adrien Boureau, Yanfei Zhao, Rebekah Anne Wells, Zhenyu Wang, Simon Nussbaum

The alloying of two-dimensional (2D) transition metal dichalcogenides (TMDs) is an established route to produce robust semiconductors with continuously tunable optoelectronic properties. However, typically reported methods for fabricating alloyed 2D TMD na ...

Royal Soc Chemistry2024

Nanofluidic logic with mechano-ionic memristive switches

Aleksandra Radenovic, Andras Kis, Andrey Chernev, Vasily Artemov, Edoardo Lopriore, Nathan Cyprien Arsène Ronceray, Yunfei Teng, Théo Denis Tobias Emmerich

Neuromorphic systems are typically based on nanoscale electronic devices, but nature relies on ions for energy-efficient information processing. Nanofluidic memristive devices could thus potentially be used to construct electrolytic computers that mimic th ...

Nature Portfolio2024

Deterministic grayscale nanotopography to engineer mobilities in strained MoS2 FETs

Jürgen Brugger, Nicola Marzari, Andras Kis, Giovanni Boero, Georg Fantner, Xia Liu, Marcos Penedo Garcia, Norma Rivano, Jin Jiang, Berke Erbas

Field-effect transistors (FETs) based on two-dimensional materials (2DMs) with atomically thin channels have emerged as a promising platform for beyond-silicon electronics. However, low carrier mobility in 2DM transistors driven by phonon scattering remain ...

Nature Research2024

CVD graphene contacts for lateral heterostructure MoS2 field effect transistors

Aleksandra Radenovic, Andras Kis, Zhenyu Wang

Intensive research has been carried out on two-dimensional materials, in particular molybdenum disulfide, towards high-performance field effect transistors for integrated circuits 1 . Fabricating transistors with ohmic contacts is a challenging task due to ...

Nature Portfolio2024