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Nicolas Grandjean

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Far-field coupling in nanobeam photonic crystal cavities

Backward diodes using heavily Mg-doped GaN growth by ammonia molecular-beam epitaxy

Fabrication defects and grating couplers in III-nitride photonic crystal nanobeam lasers (Conference Presentation)

Calcium impurity as a source of non-radiative recombination in (In,Ga)N layers grown by molecular beam epitaxy

Carrier-density-dependent recombination dynamics of excitons and electron-hole plasma in m-plane InGaN/GaN quantum wells

Low p-type contact resistance by field-emission tunneling in highly Mg-doped GaN

The Impact of Porosification upon Luminescence of HVPE Grown GaN and the Influence of the Porous Layer upon the Quality of the Overgrown GaN Film

Statistical correction of atom probe tomography data of semiconductor alloys combined with optical spectroscopy: The case of Al0.25Ga0.75N

Technology of integrated self-aligned E/D-mode n(++)GaN/InAlN/AlN/GaN MOS HEMTs for mixed-signal electronics

Vacancy-type defects in Mg-doped GaN grown by ammonia-based molecular beam epitaxy probed using a monoenergetic positron beam