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We grew heavily Mg-doped GaN using ammonia molecular-beam epitaxy. The use of low growth temperature (740 degrees C) allows decreasing the incorporation of donor-like defects (
Edoardo Charbon, Claudio Bruschini, Ekin Kizilkan, Utku Karaca, Myung Jae Lee
Giovanni De Cesare, Sylvain Dunand, Jonathan Emanuel Thomet, Mikaël Martino, Luca Massimiliano Antognini, Matthew James Large
Anna Fontcuberta i Morral, Andrea Giunto, Thomas Hagger, Louise Emma Webb