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We grew heavily Mg-doped GaN using ammonia molecular-beam epitaxy. The use of low growth temperature (740 degrees C) allows decreasing the incorporation of donor-like defects (
Anna Fontcuberta i Morral, Andrea Giunto, Thomas Hagger, Louise Emma Webb
Giovanni De Cesare, Sylvain Dunand, Jonathan Emanuel Thomet, Mikaël Martino, Luca Massimiliano Antognini, Matthew James Large
Edoardo Charbon, Claudio Bruschini, Ekin Kizilkan, Utku Karaca, Myung Jae Lee