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Mauro Mosca

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Mauro Mosca

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Defects in III-N LEDs: experimental identification and impact on electro-optical characteristics

Defect incorporation in In-containing layers and quantum wells: experimental analysis via deep level profiling and optical spectroscopy

Progress in Violet Light-Emitting Diodes Based on ZnO/GaN Heterojunction

Effects of 5 MeV electron irradiation on deep traps and electroluminescence from near-UV InGaN/GaN single quantum well light-emitting diodes with and without InAlN superlattice underlayer

Deep traps in InGaN/GaN single quantum well structures grown with and without InGaN underlayers

Low-temperature growth of n(++)-GaN by metalorganic chemical vapor deposition to achieve low-resistivity tunnel junctions on blue light emitting diodes

InAlN underlaver for near ultraviolet InGaN based light emitting diodes

Effects of InAlN underlayer on deep traps detected in near-UV InGaN/GaN single quantum well light-emitting diodes

Optical, structural, and morphological characterisation of epitaxial ZnO films grown by pulsed-laser deposition

Suppression of leakage currents in GaN-based LEDs induced by reactive-ion etching damages