Person

Antonino Francesco Castiglia

Related publications (29)

InGaN laser diode with metal-free laser ridge using n(+)-GaN contact layers

Nicolas Grandjean, Antonino Francesco Castiglia, Marco Malinverni, Marco Rossetti, Denis Martin

We report on InGaN edge emitting laser diodes with a top metal electrode located beside the laser ridge. Current spreading over the ridge is achieved via a highly doped n(+)-type GaN layer deposited on top of the structure. The low sheet resistance of the ...

Iop Publishing Ltd2016

GaN-based superluminescent diodes with long lifetime

Nicolas Grandjean, Jean-François Carlin, Antonino Francesco Castiglia

We report on the reliability of GaN-based super-luminescent light emitting diodes (SLEDs) emitting at a wavelength of 405 nm. We show that the Mg doping level in the p-type layers has an impact on both the device electro-optical characteristics and their r ...

Spie-Int Soc Optical Engineering2016

InGaN laser diodes emitting at 500 nm with p-layers grown by molecular beam epitaxy

Nicolas Grandjean, Eric Feltin, Julien Dorsaz, Antonino Francesco Castiglia, Marco Malinverni, Marco Rossetti, Jean-Michel Jacques Lamy, Denis Martin, Lise Lahourcade

We demonstrate hybrid laser diodes by combining n-type layers and an active region grown by metal organic vapor phase epitaxy with p-type layers grown by molecular beam epitaxy. These p-doped layers, grown at 740 degrees C, exhibit state-of-the-art electri ...

Japan Society of Applied Physics2015

Low temperature p-type doping of (Al)GaN layers using ammonia molecular beam epitaxy for InGaN laser diodes

Nicolas Grandjean, Eric Feltin, Julien Dorsaz, Antonino Francesco Castiglia, Marco Malinverni, Jean-Michel Jacques Lamy, Denis Martin

We demonstrate state-of-the-art p-type (Al) GaN layers deposited at low temperature (740 degrees C) by ammonia molecular beam epitaxy (NH3-MBE) to be used as top cladding of laser diodes (LDs) with the aim of further reducing the thermal budget on the InGa ...

Amer Inst Physics2014

Mg doping for p-type AlInN lattice-matched to GaN

Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Antonino Francesco Castiglia

P-type AlInN layers lattice-matched to GaN are achieved by Mg doping. The net acceptor concentration N-A-N-D is 5 x 10(18) cm(-3) at a Mg concentration [Mg] of similar to 2 x 10(19) cm(-3). Mg acceptors are partly compensated and one of the compensating de ...

American Institute of Physics2012

Static and dynamic properties of multi-section InGaN-based laser diodes

Nicolas Grandjean, Jean-François Carlin, Julien Dorsaz, Antonino Francesco Castiglia, Jean-Michel Jacques Lamy, Dmitri Boiko, Luca Alex Milo Sulmoni, Xi Zeng

We have studied multi-section InGaN multiple-quantum-well (MQW) laser diodes grown on c-plane freestanding GaN substrate consisting of an absorber section (AS) and an amplifier gain section. As a result of the interplay between external bias applied to the ...

Amer Inst Physics2012

High quality factor two dimensional GaN photonic crystal cavity membranes grown on silicon substrate

Nicolas Grandjean, Romuald Houdré, Jean-François Carlin, Raphaël Butté, Jacques Levrat, Antonino Francesco Castiglia, Kirill Atlasov, Georg Rossbach, Noelia Vico Triviño, Ulagalandha Perumal Dharanipathy

We report on the achievement of freestanding GaN photonic crystal L7 nanocavities with embedded InGaN/GaN quantum wells grown by metal organic vapor phase epitaxy on Si (111). GaN was patterned by e-beam lithography, using a SiO2 layer as a hard mask, and ...

American Institute of Physics2012

Blue monolithic AlInN-based vertical cavity surface emitting laser diode on free-standing GaN substrate

Nicolas Grandjean, Jean-François Carlin, Antonino Francesco Castiglia, Gatien Cosendey, Georg Rossbach

We report on III-nitride based blue vertical cavity surface emitting lasers using defect-free highly reflective AlInN/GaN distributed Bragg reflectors grown on c-plane free-standing GaN substrates. Lasing is demonstrated at room temperature under pulsed el ...

American Institute of Physics2012

Role of stable and metastable Mg-H complexes in p-type GaN for cw blue laser diodes

Nicolas Grandjean, Jean-François Carlin, Antonino Francesco Castiglia

Secondary ion mass spectroscopy (SIMS) and capacitance-voltage measurements were combined to thoroughly study Mg doping in GaN layers grown by metal organic vapor phase epitaxy. First we found that the Mg steady-state incorporation regime occurs for a surf ...

2011

AlGaN-Free Blue III-Nitride Laser Diodes Grown on c-Plane GaN Substrates

Nicolas Grandjean, Jean-François Carlin, Eric Feltin, Julien Dorsaz, Antonino Francesco Castiglia, Gatien Cosendey, Marco Rossetti

We report on the fabrication of InGaN-based multiple-quantum-well laser diodes (LDs) emitting at 420 nm. Structures with standard claddings (p-and n-AlGaN), asymmetric claddings (p-GaN and n-AlGaN), and AlGaN-free claddings were grown by metal organic vapo ...

2010

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